Publications - Photonic Materials

G.N. van den Hoven, A. Polman, C. van Dam, J.W.M. van Uffelen and M.K. Smit, Direct imaging of optical interference in erbium-doped Al2O3 waveguides, Opt. Lett. 21, 576-578 (1996)

G.N. van den Hoven, R.J.I.M. Koper, A. Polman, C. van Dam, J.W.M. van Uffelen and M.K. Smit: Net optical gain at 1.53 µm in an Er-doped Al2O3 waveguide amplifier on silicon In: Summaries of the Papers presented at the Topical Meeting Optical Amplifiers and their Applications, July 11-13, 1996 Monterey, California : Technical Digest, Optical Society of America, 1996. - pp. 44-47

M.J.A. de Dood, P.G. Kik, J.H. Shin and A. Polman: Incorporation, excitation and de-excitation of erbium in crystal silicon In: Rare Earth Doped Semiconductors II : Symposium held April 8-10, 1996, San Francisco, California, U.S.A. /ed. S. Coffa, A. Polman and R.N. Schwartz, Materials Research Society, 1996. - pp. 219-225

F. Priolo, G. Franzò, S. Coffa, A. Polman, E. Snoeks, G.N. van den Hoven, S. Libertino, S. Lombardo, S.U. Campisano and A. Carnera, Optical doping of materials by erbium ion implantation, Nucl. Instrum. Methods Phys. Res., Sect B 116, 77-84 (1996)

W.F. van der Weg, A. Berntsen, F.W. Saris and A. Polman, Ion implantation into amorphous solids, Mater. Chem. Phys. 46, 140-146 (1996)

E. Snoeks, G.N. van den Hoven and A. Polman, Optimization of an Er-doped silica glass optical waveguide amplifier, IEEE J. Quantum Electron. 32, 1680-1684 (1996)

M.E. Taylor, G. He, H.A. Atwater and A. Polman, Solid phase epitaxy of diamond cubic SnxGe1-x alloys, J. Appl. Phys. 80, 4384-4388 (1996)

A. Polman, J.H. Shin, G.N. van den Hoven, W.G.J.H.M. van Sark, A.J. Vredenberg, S. Lombardo and S.U. Campisano: Luminescence Quenching in Erbium-Doped Hydrogenated Amorphous Silicon In: Rare Earth Doped Semiconductors II : Symposium held April 8-10, 1996, San Francisco, California, U.S.A. /ed. S. Coffa, A. Polman and R.N. Schwartz, Materials Research Society, 1996. - pp. 239-245

K.S. Min, K.V. Shcheglov, C.M. Yang, H.A. Atwater, M.L. Brongersma and A. Polman, The role of quantum-confined excitons vs defects in the visible luminescnence of SiO2 films containing Ge nanocrystals, Appl. Phys. Lett. 68, 2511-2513 (1996)

A. Polman, R. Serna, J.S. Custer and M. Lohmeier: Segregation and trapping of erbium in silicon at a crystal-amorphous or crystal-vacuum interface In: Rare Earth Doped Semiconductors II : Symposium held April 8-10, 1996, San Francisco, California, U.S.A. /ed. S. Coffa, A. Polman and R.N. Schwartz, Materials Research Society, 1996. - pp. 21-27