Publications - Photonic Materials

  • M.L. Brongersma, E. Snoeks and A. Polman, Temperature dependence of MeV heavy ion irradiation-induced viscous flow in SiO2, Appl. Phys. Lett. 71, 1628-1630 (1997)

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  • A. Polman, J.S. Custer, P.M. Zagwijn, A.M. Molenbroek and P.F.A. Alkemade, Segregation and trapping of erbium at a moving crystal-amorphous Si interface, J. Appl. Phys. 81, 150-153 (1997)

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  • S. Lombardo, S.U. Campisano, G.N. van den Hoven and A. Polman: Electroluminescence of erbium in oxygen doped silicon In: Rare Earth Doped Semiconductors II : Symposium held April 8-10, 1996, San Francisco, California, U.S.A. /ed. S. Coffa, A. Polman and R.N. Schwartz, Materials Research Society, 1996. - pp. 333-338

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  • S. Coffa, A. Polman and R.N. Schwartz: Rare Earth Doped Semiconductors II: Symposium held April 8-10, 1996, San Francisco, Ca., U.S.A.Pittsburgh: MRS, 1996. (Materials Research Society Symposium Proceedings;)

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  • K.S. Min, K.V. Shcheglov, C.M. Yang, H.A. Atwater, M.L. Brongersma and A. Polman, Defect-related versus excitonic visible light emission from ion beam synthesized Si nanocrystals in SiO2, Appl. Phys. Lett. 69, 2033-2035 (1996)

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  • G.N. van den Hoven, R.J.I.M. Koper, A. Polman, C. van Dam, J.W.M. van Uffelen and M.K. Smit, Net optical gain at 1.53 µm in Er-doped Al2O3 waveguides on silicon, Appl. Phys. Lett. 68, 1886-1888 (1996)

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  • G.N. van den Hoven, A. Polman, C. van Dam, J.W.M. van Uffelen and M.K. Smit, Direct imaging of optical interference in erbium-doped Al2O3 waveguides, Opt. Lett. 21, 576-578 (1996)

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  • G.N. van den Hoven, R.J.I.M. Koper, A. Polman, C. van Dam, J.W.M. van Uffelen and M.K. Smit: Net optical gain at 1.53 µm in an Er-doped Al2O3 waveguide amplifier on silicon In: Summaries of the Papers presented at the Topical Meeting Optical Amplifiers and their Applications, July 11-13, 1996 Monterey, California : Technical Digest, Optical Society of America, 1996. - pp. 44-47

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  • M.J.A. de Dood, P.G. Kik, J.H. Shin and A. Polman: Incorporation, excitation and de-excitation of erbium in crystal silicon In: Rare Earth Doped Semiconductors II : Symposium held April 8-10, 1996, San Francisco, California, U.S.A. /ed. S. Coffa, A. Polman and R.N. Schwartz, Materials Research Society, 1996. - pp. 219-225

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  • F. Priolo, G. Franzò, S. Coffa, A. Polman, E. Snoeks, G.N. van den Hoven, S. Libertino, S. Lombardo, S.U. Campisano and A. Carnera, Optical doping of materials by erbium ion implantation, Nucl. Instrum. Methods Phys. Res., Sect B 116, 77-84 (1996)

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