G.N. van den Hoven, A. Polman, E. Alves, M.F. da Silva, A.A. Melo and J.C. Soares, Lattice site and photoluminescence of erbium implanted in a - Al2O3, J. Mater. Res. 12, 1401-1404 (1997)
G.N. van den Hoven, J.A. van der Elsken, A. Polman, C. van Dam, J.W.M. van Uffelen and M.K. Smit, Absorption and emission cross sections of Er3+ in Al2O3 slab waveguides, Appl. Opt. 36, 3338-3341 (1997)
Y.C. Yan, A.J. Faber, H. de Waal, P.G. Kik and A. Polman, Erbium-doped phospate glass waveguide on silicon with 4.1 Polman dB/cm gain at 1.535 µm, Appl. Phys. Lett. 71, 2922-2924 (1997)
Y.C. Yan, A.J. Faber, H. de Waal, P.G. Kik and A. Polman: Net optical gain at 1.53 mm in an Er-doped phosphate glass waveguide on siliconIn: Optical Amplifiers and their Applications, Technical Digest, Optical Society of America, 1997. - pp. 64-67
M.L. Brongersma, E. Snoeks and A. Polman, Temperature dependence of MeV heavy ion irradiation-induced viscous flow in SiO2, Appl. Phys. Lett. 71, 1628-1630 (1997)
S. Lombardo, S.U. Campisano, G.N. van den Hoven and A. Polman: Electroluminescence of erbium in oxygen doped siliconIn: Rare Earth Doped Semiconductors II : Symposium held April 8-10, 1996, San Francisco, California, U.S.A. /ed. S. Coffa, A. Polman and R.N. Schwartz, Materials Research Society, 1996. - pp. 333-338
S. Coffa, A. Polman and R.N. Schwartz: Rare Earth Doped Semiconductors II: Symposium held April 8-10, 1996, San Francisco, Ca., U.S.A.In: , Pittsburgh: MRS, 1996. (Materials Research Society Symposium Proceedings;)
K.S. Min, K.V. Shcheglov, C.M. Yang, H.A. Atwater, M.L. Brongersma and A. Polman, Defect-related versus excitonic visible light emission from ion beam synthesized Si nanocrystals in SiO2, Appl. Phys. Lett. 69, 2033-2035 (1996)
G.N. van den Hoven, R.J.I.M. Koper, A. Polman, C. van Dam, J.W.M. van Uffelen and M.K. Smit, Net optical gain at 1.53 µm in Er-doped Al2O3 waveguides on silicon, Appl. Phys. Lett. 68, 1886-1888 (1996)
