A. Polman, J.S. Custer, P.M. Zagwijn, A.M. Molenbroek and P.F.A. Alkemade, Segregation and trapping of erbium at a moving crystal-amorphous Si interface, J. Appl. Phys. 81, 150-153 (1997)
G.N. van den Hoven, A. Polman, E. Alves, M.F. da Silva, A.A. Melo and J.C. Soares, Lattice site and photoluminescence of erbium implanted in a - Al2O3, J. Mater. Res. 12, 1401-1404 (1997)
G.N. van den Hoven, J.A. van der Elsken, A. Polman, C. van Dam, J.W.M. van Uffelen and M.K. Smit, Absorption and emission cross sections of Er3+ in Al2O3 slab waveguides, Appl. Opt. 36, 3338-3341 (1997)
Y.C. Yan, A.J. Faber, H. de Waal, P.G. Kik and A. Polman, Erbium-doped phospate glass waveguide on silicon with 4.1 Polman dB/cm gain at 1.535 µm, Appl. Phys. Lett. 71, 2922-2924 (1997)
A. Polman, R. Serna, J.S. Custer and M. Lohmeier: Segregation and trapping of erbium in silicon at a crystal-amorphous or crystal-vacuum interfaceIn: Rare Earth Doped Semiconductors II : Symposium held April 8-10, 1996, San Francisco, California, U.S.A. /ed. S. Coffa, A. Polman and R.N. Schwartz, Materials Research Society, 1996. - pp. 21-27
K.S. Min, K.V. Shcheglov, C.M. Yang, R.P. Camata, H.A. Atwater, M.L. Brongersma and A. Polman: On the origin of visible luminescence from SiO2 films containing nanocrystalsIn: Surface/Interface and Stress Effects in Electronic Materials Nanostructures, Materials Research Society, 1996. - pp. 247-252
J.H. Shin, R. Serna, G.N. van den Hoven, A. Polman, W.G.J.H.M. van Sark and A.J. Vredenberg, Luminescence quenching in erbium-doped hydrogenated amorphous silicon, Appl. Phys. Lett. 68, 997-999 (1996)
G.N. van den Hoven, E. Snoeks, A. Polman, C. van Dam, J.W.M. van Uffelen and M.K. Smit, Upconversion in Er-implanted Al2O3 waveguides, J. Appl. Phys. 79, 1258-1266 (1996)
