Publications - Photonic Materials

A. Polman, J.S. Custer, P.M. Zagwijn, A.M. Molenbroek and P.F.A. Alkemade, Segregation and trapping of erbium at a moving crystal-amorphous Si interface, J. Appl. Phys. 81, 150-153 (1997)

P.G. Kik, M.J.A. de Dood, K. Kikoin and A. Polman, Excitation and deexcitation of Er3+ in crystalline silicon, Appl. Phys. Lett. 70, 1721-1723 (1997)

A. Polman, Erbium implanted thin film photonic materials, J. Appl. Phys. 82, (1), 1-39 (1997)

G.N. van den Hoven, A. Polman, E. Alves, M.F. da Silva, A.A. Melo and J.C. Soares, Lattice site and photoluminescence of erbium implanted in a - Al2O3, J. Mater. Res. 12, 1401-1404 (1997)

G.N. van den Hoven, J.A. van der Elsken, A. Polman, C. van Dam, J.W.M. van Uffelen and M.K. Smit, Absorption and emission cross sections of Er3+ in Al2O3 slab waveguides, Appl. Opt. 36, 3338-3341 (1997)

Y.C. Yan, A.J. Faber, H. de Waal, P.G. Kik and A. Polman, Erbium-doped phospate glass waveguide on silicon with 4.1 Polman dB/cm gain at 1.535 µm, Appl. Phys. Lett. 71, 2922-2924 (1997)

G.N. van den Hoven, E. Snoeks, A. Polman, C. van Dam, J.W.M. van Uffelen and M.K. Smit, Upconversion in Er-implanted Al2O3 waveguides, J. Appl. Phys. 79, 1258-1266 (1996)

F. Priolo, S. Coffa, G. Franzò and A. Polman: Excitation mechanisms and light emitting device performances in Er-doped crystalline Si In: Rare Earth Doped Semiconductors II : Symposium held April 8-10, 1996, San Francisco, California, U.S.A. /ed. S. Coffa, A. Polman and R.N. Schwartz, Materials Research Society, 1996. - pp. 305-316

R. Serna, J.H. Shin, M. Lohmeier, E. Vlieg, A. Polman and P.F.A. Alkemade, Incorporation and optical activation of erbium in silicon using molecular beam epitaxy, J. Appl. Phys. 79, 2658-2662 (1996)

E. Snoeks, P.G. Kik and A. Polman, Concentration quenching in erbium implanted alkali silicate glasses, Opt. Mater. 5, 159-167 (1996)