A. Polman, J.S. Custer, P.M. Zagwijn, A.M. Molenbroek and P.F.A. Alkemade, Segregation and trapping of erbium at a moving crystal-amorphous Si interface, J. Appl. Phys. 81, 150-153 (1997)
G.N. van den Hoven, A. Polman, E. Alves, M.F. da Silva, A.A. Melo and J.C. Soares, Lattice site and photoluminescence of erbium implanted in a - Al2O3, J. Mater. Res. 12, 1401-1404 (1997)
G.N. van den Hoven, J.A. van der Elsken, A. Polman, C. van Dam, J.W.M. van Uffelen and M.K. Smit, Absorption and emission cross sections of Er3+ in Al2O3 slab waveguides, Appl. Opt. 36, 3338-3341 (1997)
G.N. van den Hoven, A. Polman, C. van Dam, J.W.M. van Uffelen and M.K. Smit, Direct imaging of optical interference in erbium-doped Al2O3 waveguides, Opt. Lett. 21, 576-578 (1996)
G.N. van den Hoven, R.J.I.M. Koper, A. Polman, C. van Dam, J.W.M. van Uffelen and M.K. Smit: Net optical gain at 1.53 µm in an Er-doped Al2O3 waveguide amplifier on siliconIn: Summaries of the Papers presented at the Topical Meeting Optical Amplifiers and their Applications, July 11-13, 1996 Monterey, California : Technical Digest, Optical Society of America, 1996. - pp. 44-47
M.J.A. de Dood, P.G. Kik, J.H. Shin and A. Polman: Incorporation, excitation and de-excitation of erbium in crystal siliconIn: Rare Earth Doped Semiconductors II : Symposium held April 8-10, 1996, San Francisco, California, U.S.A. /ed. S. Coffa, A. Polman and R.N. Schwartz, Materials Research Society, 1996. - pp. 219-225
F. Priolo, G. Franzò, S. Coffa, A. Polman, E. Snoeks, G.N. van den Hoven, S. Libertino, S. Lombardo, S.U. Campisano and A. Carnera, Optical doping of materials by erbium ion implantation, Nucl. Instrum. Methods Phys. Res., Sect B 116, 77-84 (1996)
