S. Coffa, A. Polman and R.N. Schwartz: Rare Earth Doped Semiconductors II: Symposium held April 8-10, 1996, San Francisco, Ca., U.S.A.Pittsburgh: MRS, 1996. (Materials Research Society Symposium Proceedings;)
K.S. Min, K.V. Shcheglov, C.M. Yang, H.A. Atwater, M.L. Brongersma and A. Polman, Defect-related versus excitonic visible light emission from ion beam synthesized Si nanocrystals in SiO2, Appl. Phys. Lett. 69, 2033-2035 (1996)
S. Coffa, F. Priolo, G. Franzò, A. Polman, S. Libertino, M. Saggio and A. Carnera, Materials issues and device performances for light emitting Er-implanted Si, Nucl. Instrum. Methods Phys. Res., Sect B 106, 386-392 (1995)
S. Lombardo, S.U. Campisano, G.N. van den Hoven and A. Polman, Erbium in oxygen-doped silicon: electroluminescence, J. Appl. Phys. 77, 6504-6510 (1995)
C.M. Yang, K.V. Shcheglov, M.L. Brongersma, A. Polman and H.A. Atwater: Correlation of size and photoluminescence for Ge nanocrystals in SiO2 matricesIn: Microcrystalline and Nanocrystalline Semiconductors /ed. R.W. Collins, C.C. Tsai, M. Hirose, F. Koch and L. Brus, Materials Research Society, 1995. - pp. 181-186
E. Snoeks, G.N. van den Hoven, A. Polman, B.L.M. Hendriksen, M.B.J. Diemeer and F. Priolo, Cooperative upconversion in erbium-implanted sodalime silicate glass optical waveguides, J. Opt. Soc. Am. B 12, 1468-1474 (1995)
E. Snoeks, Thomas Weber, A. Cacciato and A. Polman, MeV ion irradiation-induced creation and relaxation of mechanical stress in silica, J. Appl. Phys. 78, 4723-4732 (1995)
R. Serna, M. Lohmeier, P.M. Zagwijn, E. Vlieg and A. Polman, Segregation and trapping of erbium during silicon molecular beam epitaxy, Appl. Phys. Lett. 66, 1385-1387 (1995)
C. van Dam, J.W.M. van Uffelen, M.K. Smit, G.N. van den Hoven and A. Polman: Optical imaging of multimode interference patterns with a resolution below the diffraction limitIn: ECIO '95 Proceedings 7th European Conference on Integrated Optics, April 3-6, 1995 Delft, The Netherlands : Regular and Invited Papers /ed. L. Shi, L.H. Spiekman and X.J.M. Leijtens, Delft University Press, 1995. - pp. 125-128
J.H. Shin, G.N. van den Hoven and A. Polman, Origin of the 1.54 µm luminescence of erbium-implanted porous silicon, Appl. Phys. Lett. 66, 2379-2381 (1995)
