G.N. van den Hoven, R.J.I.M. Koper, A. Polman, C. van Dam, J.W.M. van Uffelen and M.K. Smit: Net optical gain at 1.53 µm in an Er-doped Al2O3 waveguide amplifier on siliconIn: Summaries of the Papers presented at the Topical Meeting Optical Amplifiers and their Applications, July 11-13, 1996 Monterey, California : Technical Digest, Optical Society of America, 1996. - pp. 44-47
M.J.A. de Dood, P.G. Kik, J.H. Shin and A. Polman: Incorporation, excitation and de-excitation of erbium in crystal siliconIn: Rare Earth Doped Semiconductors II : Symposium held April 8-10, 1996, San Francisco, California, U.S.A. /ed. S. Coffa, A. Polman and R.N. Schwartz, Materials Research Society, 1996. - pp. 219-225
E. Snoeks, G.N. van den Hoven, A. Polman, B.L.M. Hendriksen, M.B.J. Diemeer and F. Priolo, Cooperative upconversion in erbium-implanted sodalime silicate glass optical waveguides, J. Opt. Soc. Am. B 12, 1468-1474 (1995)
E. Snoeks, Thomas Weber, A. Cacciato and A. Polman, MeV ion irradiation-induced creation and relaxation of mechanical stress in silica, J. Appl. Phys. 78, 4723-4732 (1995)
R. Serna, M. Lohmeier, P.M. Zagwijn, E. Vlieg and A. Polman, Segregation and trapping of erbium during silicon molecular beam epitaxy, Appl. Phys. Lett. 66, 1385-1387 (1995)
C. van Dam, J.W.M. van Uffelen, M.K. Smit, G.N. van den Hoven and A. Polman: Optical imaging of multimode interference patterns with a resolution below the diffraction limitIn: ECIO '95 Proceedings 7th European Conference on Integrated Optics, April 3-6, 1995 Delft, The Netherlands : Regular and Invited Papers /ed. L. Shi, L.H. Spiekman and X.J.M. Leijtens, Delft University Press, 1995. - pp. 125-128
J.H. Shin, G.N. van den Hoven and A. Polman, Origin of the 1.54 µm luminescence of erbium-implanted porous silicon, Appl. Phys. Lett. 66, 2379-2381 (1995)
H.A. Atwater, J.T. Dickinson, D.H. Lowndes and A. Polman: Film Synthesis and Growth using Energetic Beams: Symposium held April 17-20, 1995, San Francisco, California, U.S.A.Warrendale: MRS, 1995. (Materials Research Society Symposium Proceedings;)
E. Alves, M.F. da Silva, G.N. van den Hoven, A. Polman, A.A. Melo and J.C. Soares, Incorporation and stability of erbium in sapphire by ion implantation, Nucl. Instrum. Methods Phys. Res., Sect B 106, 429-432 (1995)
A. Polman, G.N. van den Hoven, J.S. Custer, J.H. Shin, R. Serna and P.F.A. Alkemade, Erbium in crystal silicon: optical activation, excitation, and concentration limits, J. Appl. Phys. 77, 1256-1262 (1995)