N. Hamelin, P.G. Kik, J.F. Suyver, K. Kikoin, A. Polman, A. Schönecker and F.W. Saris, Energy backtransfer and infrared photoresponse in erbium-doped silicon p-n diodes, J. Appl. Phys. 88, 5381-5387 (2000)
C. Strohhöfer, P.G. Kik and A. Polman, Selective modification of the Er3+ 4I11/2 branching ratio by energy transfer to Eu3+, J. Appl. Phys. 88, 4486-4490 (2000)
A. Polman: Exciting erbium-doped planar optical amplifier materialsIn: Thin Films for Optical Waveguide Devices and Materials for Optical Limiting, Symposia held November 30-December 3, 1999, Boston, MA, U.S.A. /ed. K. Nashimoto, Pittsburgh: MRS, 2000. - pp. 3-14
J.F. Suyver, P.G. Kik, T. Kimura, A. Polman, G. Franzò and S. Coffa, Optical and electrical doping of silicon with holmium, Nucl. Instrum. Methods Phys. Res., Sect B 148, 497-501 (1999)
M.L. Brongersma, A. Polman, K.S. Min and H.A. Atwater, Depth distribution of luminescent Si nanocrystals in Si implanted SiO2 films on Si, J. Appl. Phys. 86, 759-763 (1999)
S.I. Klink, G.A. Hebbink, L. Grave, F.C.J.M. van Veggel, D.N. Reinhoudt, L.H. Slooff, A. Polman and J.W. Hofstraat, Sensitized near-infrared luminescence from polydentate triphenylene-functionalized Nd3+, Yb3+, and Er3+ complexes, J. Appl. Phys. 86, 1181-1185 (1999)
T. van Dillen, M.L. Brongersma, E. Snoeks and A. Polman, Activation energy spectra for annealing of ion irradiation induced defects in silica glasses, Nucl. Instrum. Methods Phys. Res., Sect B 148, 221-226 (1999)
A.J. Vredenberg, A. Polman, P.A. Stolk, E. Snoeks, M.L. Brongersma and I.M.P. Aarts: Ion Beam Modification of Materials: Proceedings of the Eleventh International Conference on Ion Beam Modification of Materials, Amsterdam, The Netherlands, August 31 - September 4, 1998In: , Elsevier B.V., 1999. (Beam Interactions with Materials and Atoms; Sect. B of Nucl. Instr. & Meth. Phys. Res.;)
T. Zijlstra, E. van der Drift, M.J.A. de Dood, E. Snoeks and A. Polman, Fabrication of two-dimensional photonic crystal waveguides for 1.5 mm in silicon by deep anisotropic dry etching, J. Vac. Sci. Technol. B 17, 2734-2739 (1999)