M.L. Brongersma, K.S. Min, E. Boer, T. Tambo, A. Polman and H.A. Atwater: Tailoring the optical properties of Si nanocrystals in SiO2: Materials issues and nanocrystal laser perspectivesIn: Materials and Devices for Silicon-Based Optoelectronics : Symposium held December 1-3, 1997, Boston, Massachusetts, U.S.A. /ed. A. Polman, S. Coffa and R. Soref, Pittsburgh: MRS, 1998. - pp. 213-218
Y.C. Yan, A.J. Faber, H. de Waal, P.G. Kik and A. Polman: Net optical gain at 1.53 mm in an Er-doped phosphate glass waveguide on siliconIn: Optical Amplifiers and their Applications, Technical Digest, Optical Society of America, 1997. - pp. 64-67
M.L. Brongersma, E. Snoeks and A. Polman, Temperature dependence of MeV heavy ion irradiation-induced viscous flow in SiO2, Appl. Phys. Lett. 71, 1628-1630 (1997)
A. Polman, J.S. Custer, P.M. Zagwijn, A.M. Molenbroek and P.F.A. Alkemade, Segregation and trapping of erbium at a moving crystal-amorphous Si interface, J. Appl. Phys. 81, 150-153 (1997)
G.N. van den Hoven, A. Polman, E. Alves, M.F. da Silva, A.A. Melo and J.C. Soares, Lattice site and photoluminescence of erbium implanted in a - Al2O3, J. Mater. Res. 12, 1401-1404 (1997)
G.N. van den Hoven, J.A. van der Elsken, A. Polman, C. van Dam, J.W.M. van Uffelen and M.K. Smit, Absorption and emission cross sections of Er3+ in Al2O3 slab waveguides, Appl. Opt. 36, 3338-3341 (1997)
Y.C. Yan, A.J. Faber, H. de Waal, P.G. Kik and A. Polman, Erbium-doped phospate glass waveguide on silicon with 4.1 Polman dB/cm gain at 1.535 µm, Appl. Phys. Lett. 71, 2922-2924 (1997)
A. Polman, J.H. Shin, G.N. van den Hoven, W.G.J.H.M. van Sark, A.J. Vredenberg, S. Lombardo and S.U. Campisano: Luminescence Quenching in Erbium-Doped Hydrogenated Amorphous SiliconIn: Rare Earth Doped Semiconductors II : Symposium held April 8-10, 1996, San Francisco, California, U.S.A. /ed. S. Coffa, A. Polman and R.N. Schwartz, Materials Research Society, 1996. - pp. 239-245
