Publications - Photonic Materials

M.E. Taylor, G. He, H.A. Atwater and A. Polman, Solid phase epitaxy of diamond cubic SnxGe1-x alloys, J. Appl. Phys. 80, 4384-4388 (1996)

A. Polman, J.H. Shin, G.N. van den Hoven, W.G.J.H.M. van Sark, A.J. Vredenberg, S. Lombardo and S.U. Campisano: Luminescence Quenching in Erbium-Doped Hydrogenated Amorphous Silicon In: Rare Earth Doped Semiconductors II : Symposium held April 8-10, 1996, San Francisco, California, U.S.A. /ed. S. Coffa, A. Polman and R.N. Schwartz, Materials Research Society, 1996. - pp. 239-245

K.S. Min, K.V. Shcheglov, C.M. Yang, H.A. Atwater, M.L. Brongersma and A. Polman, The role of quantum-confined excitons vs defects in the visible luminescnence of SiO2 films containing Ge nanocrystals, Appl. Phys. Lett. 68, 2511-2513 (1996)

A. Polman, R. Serna, J.S. Custer and M. Lohmeier: Segregation and trapping of erbium in silicon at a crystal-amorphous or crystal-vacuum interface In: Rare Earth Doped Semiconductors II : Symposium held April 8-10, 1996, San Francisco, California, U.S.A. /ed. S. Coffa, A. Polman and R.N. Schwartz, Materials Research Society, 1996. - pp. 21-27

K.S. Min, K.V. Shcheglov, C.M. Yang, R.P. Camata, H.A. Atwater, M.L. Brongersma and A. Polman: On the origin of visible luminescence from SiO2 films containing nanocrystals In: Surface/Interface and Stress Effects in Electronic Materials Nanostructures, Materials Research Society, 1996. - pp. 247-252

A. Polman, G.N. van den Hoven, J.S. Custer, J.H. Shin, R. Serna and P.F.A. Alkemade, Erbium in crystal silicon: optical activation, excitation, and concentration limits, J. Appl. Phys. 77, 1256-1262 (1995)

G. Franzò, F. Priolo, S. Coffa, A. Polman and A. Carnera, Room temperature light emitting silicon diodes fabricated by erbium ion implantation, Nucl. Instrum. Methods Phys. Res., Sect B 96, 374-377 (1995)

S. Lombardo, S.U. Campisano, G.N. van den Hoven and A. Polman, Room-temperature luminescence in semi-insulating polycrystalline silicon implanted with Er, Nucl. Instrum. Methods Phys. Res., Sect B 96, 378-381 (1995)

J.H. Shin, G.N. van den Hoven and A. Polman, Direct experimental evidence for trap-state mediated excitation of Er3+ in silicon, Appl. Phys. Lett. 67, 377-379 (1995)

G.N. van den Hoven, J.H. Shin, A. Polman, S. Lombardo and S.U. Campisano, Erbium in oxygen-doped silicon: optical excitation, J. Appl. Phys. 78, 2642-2650 (1995)