E. Snoeks, G.N. van den Hoven and A. Polman, Optimization of an Er-doped silica glass optical waveguide amplifier, IEEE J. Quantum Electron. 32, 1680-1684 (1996)
R. Serna, M. Lohmeier, P.M. Zagwijn, E. Vlieg and A. Polman, Segregation and trapping of erbium during silicon molecular beam epitaxy, Appl. Phys. Lett. 66, 1385-1387 (1995)
C. van Dam, J.W.M. van Uffelen, M.K. Smit, G.N. van den Hoven and A. Polman: Optical imaging of multimode interference patterns with a resolution below the diffraction limitIn: ECIO '95 Proceedings 7th European Conference on Integrated Optics, April 3-6, 1995 Delft, The Netherlands : Regular and Invited Papers /ed. L. Shi, L.H. Spiekman and X.J.M. Leijtens, Delft University Press, 1995. - pp. 125-128
J.H. Shin, G.N. van den Hoven and A. Polman, Origin of the 1.54 µm luminescence of erbium-implanted porous silicon, Appl. Phys. Lett. 66, 2379-2381 (1995)
H.A. Atwater, J.T. Dickinson, D.H. Lowndes and A. Polman: Film Synthesis and Growth using Energetic Beams: Symposium held April 17-20, 1995, San Francisco, California, U.S.A.Warrendale: MRS, 1995. (Materials Research Society Symposium Proceedings;)
E. Alves, M.F. da Silva, G.N. van den Hoven, A. Polman, A.A. Melo and J.C. Soares, Incorporation and stability of erbium in sapphire by ion implantation, Nucl. Instrum. Methods Phys. Res., Sect B 106, 429-432 (1995)
A. Polman, G.N. van den Hoven, J.S. Custer, J.H. Shin, R. Serna and P.F.A. Alkemade, Erbium in crystal silicon: optical activation, excitation, and concentration limits, J. Appl. Phys. 77, 1256-1262 (1995)
G. Franzò, F. Priolo, S. Coffa, A. Polman and A. Carnera, Room temperature light emitting silicon diodes fabricated by erbium ion implantation, Nucl. Instrum. Methods Phys. Res., Sect B 96, 374-377 (1995)
S. Lombardo, S.U. Campisano, G.N. van den Hoven and A. Polman, Room-temperature luminescence in semi-insulating polycrystalline silicon implanted with Er, Nucl. Instrum. Methods Phys. Res., Sect B 96, 378-381 (1995)
