G.N. van den Hoven, R.J.I.M. Koper, A. Polman, C. van Dam, J.W.M. van Uffelen and M.K. Smit, Net optical gain at 1.53 µm in Er-doped Al2O3 waveguides on silicon, Appl. Phys. Lett. 68, 1886-1888 (1996)
G.N. van den Hoven, A. Polman, C. van Dam, J.W.M. van Uffelen and M.K. Smit, Direct imaging of optical interference in erbium-doped Al2O3 waveguides, Opt. Lett. 21, 576-578 (1996)
G.N. van den Hoven, R.J.I.M. Koper, A. Polman, C. van Dam, J.W.M. van Uffelen and M.K. Smit: Net optical gain at 1.53 µm in an Er-doped Al2O3 waveguide amplifier on siliconIn: Summaries of the Papers presented at the Topical Meeting Optical Amplifiers and their Applications, July 11-13, 1996 Monterey, California : Technical Digest, Optical Society of America, 1996. - pp. 44-47
M.J.A. de Dood, P.G. Kik, J.H. Shin and A. Polman: Incorporation, excitation and de-excitation of erbium in crystal siliconIn: Rare Earth Doped Semiconductors II : Symposium held April 8-10, 1996, San Francisco, California, U.S.A. /ed. S. Coffa, A. Polman and R.N. Schwartz, Materials Research Society, 1996. - pp. 219-225
F. Priolo, G. Franzò, S. Coffa, A. Polman, E. Snoeks, G.N. van den Hoven, S. Libertino, S. Lombardo, S.U. Campisano and A. Carnera, Optical doping of materials by erbium ion implantation, Nucl. Instrum. Methods Phys. Res., Sect B 116, 77-84 (1996)
E. Snoeks, Thomas Weber, A. Cacciato and A. Polman, MeV ion irradiation-induced creation and relaxation of mechanical stress in silica, J. Appl. Phys. 78, 4723-4732 (1995)
R. Serna, M. Lohmeier, P.M. Zagwijn, E. Vlieg and A. Polman, Segregation and trapping of erbium during silicon molecular beam epitaxy, Appl. Phys. Lett. 66, 1385-1387 (1995)
C. van Dam, J.W.M. van Uffelen, M.K. Smit, G.N. van den Hoven and A. Polman: Optical imaging of multimode interference patterns with a resolution below the diffraction limitIn: ECIO '95 Proceedings 7th European Conference on Integrated Optics, April 3-6, 1995 Delft, The Netherlands : Regular and Invited Papers /ed. L. Shi, L.H. Spiekman and X.J.M. Leijtens, Delft University Press, 1995. - pp. 125-128
J.H. Shin, G.N. van den Hoven and A. Polman, Origin of the 1.54 µm luminescence of erbium-implanted porous silicon, Appl. Phys. Lett. 66, 2379-2381 (1995)