Publications - Photonic Materials

  • G.N. van den Hoven, R.J.I.M. Koper, A. Polman, C. van Dam, J.W.M. van Uffelen and M.K. Smit, Net optical gain at 1.53 µm in Er-doped Al2O3 waveguides on silicon, Appl. Phys. Lett. 68, 1886-1888 (1996)

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  • G.N. van den Hoven, A. Polman, C. van Dam, J.W.M. van Uffelen and M.K. Smit, Direct imaging of optical interference in erbium-doped Al2O3 waveguides, Opt. Lett. 21, 576-578 (1996)

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  • G.N. van den Hoven, R.J.I.M. Koper, A. Polman, C. van Dam, J.W.M. van Uffelen and M.K. Smit: Net optical gain at 1.53 µm in an Er-doped Al2O3 waveguide amplifier on silicon In: Summaries of the Papers presented at the Topical Meeting Optical Amplifiers and their Applications, July 11-13, 1996 Monterey, California : Technical Digest, Optical Society of America, 1996. - pp. 44-47

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  • M.J.A. de Dood, P.G. Kik, J.H. Shin and A. Polman: Incorporation, excitation and de-excitation of erbium in crystal silicon In: Rare Earth Doped Semiconductors II : Symposium held April 8-10, 1996, San Francisco, California, U.S.A. /ed. S. Coffa, A. Polman and R.N. Schwartz, Materials Research Society, 1996. - pp. 219-225

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  • F. Priolo, G. Franzò, S. Coffa, A. Polman, E. Snoeks, G.N. van den Hoven, S. Libertino, S. Lombardo, S.U. Campisano and A. Carnera, Optical doping of materials by erbium ion implantation, Nucl. Instrum. Methods Phys. Res., Sect B 116, 77-84 (1996)

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  • W.F. van der Weg, A. Berntsen, F.W. Saris and A. Polman, Ion implantation into amorphous solids, Mater. Chem. Phys. 46, 140-146 (1996)

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  • E. Snoeks, Thomas Weber, A. Cacciato and A. Polman, MeV ion irradiation-induced creation and relaxation of mechanical stress in silica, J. Appl. Phys. 78, 4723-4732 (1995)

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  • R. Serna, M. Lohmeier, P.M. Zagwijn, E. Vlieg and A. Polman, Segregation and trapping of erbium during silicon molecular beam epitaxy, Appl. Phys. Lett. 66, 1385-1387 (1995)

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  • C. van Dam, J.W.M. van Uffelen, M.K. Smit, G.N. van den Hoven and A. Polman: Optical imaging of multimode interference patterns with a resolution below the diffraction limit In: ECIO '95 Proceedings 7th European Conference on Integrated Optics, April 3-6, 1995 Delft, The Netherlands : Regular and Invited Papers /ed. L. Shi, L.H. Spiekman and X.J.M. Leijtens, Delft University Press, 1995. - pp. 125-128

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  • J.H. Shin, G.N. van den Hoven and A. Polman, Origin of the 1.54 µm luminescence of erbium-implanted porous silicon, Appl. Phys. Lett. 66, 2379-2381 (1995)

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