Publications - Photonic Materials

A. Polman, G.N. van den Hoven, J.S. Custer, J.H. Shin, R. Serna and P.F.A. Alkemade, Erbium in crystal silicon: optical activation, excitation, and concentration limits, J. Appl. Phys. 77, 1256-1262 (1995)

G. Franzò, F. Priolo, S. Coffa, A. Polman and A. Carnera, Room temperature light emitting silicon diodes fabricated by erbium ion implantation, Nucl. Instrum. Methods Phys. Res., Sect B 96, 374-377 (1995)

S. Lombardo, S.U. Campisano, G.N. van den Hoven and A. Polman, Room-temperature luminescence in semi-insulating polycrystalline silicon implanted with Er, Nucl. Instrum. Methods Phys. Res., Sect B 96, 378-381 (1995)

J.H. Shin, G.N. van den Hoven and A. Polman, Direct experimental evidence for trap-state mediated excitation of Er3+ in silicon, Appl. Phys. Lett. 67, 377-379 (1995)

R. Serna, M. Lohmeier, E. Vlieg and A. Polman: 1,5 µm Room-temperature luminescence from erbium in oxygen-doped silicon grown by molecular beam epitaxy In: 1994 Conference on Lasers and Electro-Optics Europe, RAI Congress Centre Amsterdam, The Netherlands, 28 August-2 September, 1994, New York: IEEE, 1994. - pp. 375-376

E. Snoeks, A. Polman and C.A. Volkert, Densification, anisotropic deformation, and plastic flow of SiO2 during MeV heavy ion irradiation, Appl. Phys. Lett. 65, 2487-2489 (1994)

J.S. Custer, A. Polman and H.M. van Pinxteren, Erbium in crystal silicon: segregation and trapping during solid phase epitaxy of amorphous silicon, J. Appl. Phys. 75, 2809-2817 (1994)

M. Fleuster, C. Buchal, E. Snoeks and A. Polman, Optical and structural properties of MeV erbium implanted LiNbO3, J. Appl. Phys. 75, 173-180 (1994)

G.N. van den Hoven, E. Radius, E. Snoeks, A. Polman, C. van Dam, J.W.M. van Uffelen and M.K. Smit: Er3+ absorption and optical gain in Al2O3 waveguides In: 1994 Conference on Lasers and Electro-Optics Europe, RAI Congress Centre Amsterdam, The Netherlands, 28 August-2 September, 1994, New York: IEEE, 1994.

E. Snoeks, A. Lagendijk, M.L. Brongersma and A. Polman: Spontaneous emission rate of erbium implanted in silica near a dielectric interface In: 1994 5th European Quantum Electronics Conference, RAI Congress Centre Amsterdam, The Netherlands 28 August - 2 September, 1994, New York: IEEE, 1994.