Publications - Photonic Materials

E. Alves, M.F. da Silva, G.N. van den Hoven, A. Polman, A.A. Melo and J.C. Soares, Incorporation and stability of erbium in sapphire by ion implantation, Nucl. Instrum. Methods Phys. Res., Sect B 106, 429-432 (1995)

A. Polman: Erbium ion implantation for optical doping In: Materials Synthesis and Processing Using Ion Beams : Symposium held November 29-December 3, 1993, Boston, Massachusetts, U.S.A. /ed. R.J. Culbertson, O.W. Holland, K.S. Jones and K. Maex, Materials Research Society, 1994. - pp. 385-396

H.A. Atwater, K.V. Shcheglov, S.S. Wong, K.J. Vahala, R.C. Flagan, M.L. Brongersma and A. Polman: Ion beam synthesis of luminescent Si and Ge nanocrystals in a silicon dioxide matrix In: Materials Synthesis and Processing Using Ion Beams : Symposium held November 29-December 3, 1993, Boston, Massachusetts, U.S.A. /ed. R.J. Culbertson, O.W. Holland, K.S. Jones and K. Maex, Materials Research Society, 1994. - pp. 409-420

R. Serna, M. Lohmeier, E. Vlieg and A. Polman: 1,5 µm Room-temperature luminescence from erbium in oxygen-doped silicon grown by molecular beam epitaxy In: 1994 Conference on Lasers and Electro-Optics Europe, RAI Congress Centre Amsterdam, The Netherlands, 28 August-2 September, 1994, New York: IEEE, 1994. - pp. 375-376

E. Snoeks, A. Polman and C.A. Volkert, Densification, anisotropic deformation, and plastic flow of SiO2 during MeV heavy ion irradiation, Appl. Phys. Lett. 65, 2487-2489 (1994)

J.S. Custer, A. Polman and H.M. van Pinxteren, Erbium in crystal silicon: segregation and trapping during solid phase epitaxy of amorphous silicon, J. Appl. Phys. 75, 2809-2817 (1994)

M. Fleuster, C. Buchal, E. Snoeks and A. Polman, Optical and structural properties of MeV erbium implanted LiNbO3, J. Appl. Phys. 75, 173-180 (1994)

G.N. van den Hoven, E. Radius, E. Snoeks, A. Polman, C. van Dam, J.W.M. van Uffelen and M.K. Smit: Er3+ absorption and optical gain in Al2O3 waveguides In: 1994 Conference on Lasers and Electro-Optics Europe, RAI Congress Centre Amsterdam, The Netherlands, 28 August-2 September, 1994, New York: IEEE, 1994.

E. Snoeks, A. Lagendijk, M.L. Brongersma and A. Polman: Spontaneous emission rate of erbium implanted in silica near a dielectric interface In: 1994 5th European Quantum Electronics Conference, RAI Congress Centre Amsterdam, The Netherlands 28 August - 2 September, 1994, New York: IEEE, 1994.

R. Serna, E. Snoeks, G.N. van den Hoven and A. Polman, 1.5 µm room-temperature luminescence from Er-implanted oxygen-doped silicon epitaxial films grown by molecular beam epitaxy, J. Appl. Phys. 75, 2644-2647 (1994)