Publications - Photonic Materials

  • C.M. Yang, K.V. Shcheglov, M.L. Brongersma, A. Polman and H.A. Atwater: Correlation of size and photoluminescence for Ge nanocrystals in SiO2 matrices In: Microcrystalline and Nanocrystalline Semiconductors /ed. R.W. Collins, C.C. Tsai, M. Hirose, F. Koch and L. Brus, Materials Research Society, 1995. - pp. 181-186

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  • S. Coffa, F. Priolo, G. Franzò, A. Polman and R. Serna, Temperature dependence and quenching processes of the intra-4¦ luminescence of Er in crystalline Si, Phys. Rev. B 49, 16313-16320 (1994)

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  • M. Fleuster, C. Buchal, E. Snoeks and A. Polman, Rapid thermal annealing of MeV erbium implanted LiNbO3 single crystals for optical doping, Appl. Phys. Lett. 65, 225-227 (1994)

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  • F. Priolo, G. Franzò, S. Coffa, A. Polman, V. Bellani, A. Carnera and C. Spinella: Erbium implantation in silicon: A way towards Si-based optoelectronics In: Materials Synthesis and Processing Using Ion Beams : Symposium held November 29-December 3, 1993, Boston, Massachusetts, U.S.A. /ed. R.J. Culbertson, O.W. Holland, K.S. Jones and K. Maex, Materials Research Society, 1994. - pp. 397-408

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  • M. Fleuster, C. Buchal, E. Snoeks and A. Polman: Optical and structural properties of MeV erbium implanted LiNbO3 In: Materials Synthesis and Processing Using Ion Beams : Symposium held November 29-December 3, 1993, Boston, Massachusetts, U.S.A. /ed. R.J. Culbertson, O.W. Holland, K.S. Jones and K. Maex, Materials Research Society, 1994. - pp. 463-468

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  • P.M. Zagwijn, W.J. Huisman, A. Polman, E. Vlieg, A.H. Reader and D.J. Gravesteijn, Transient diffusion of Ga in amorphous silicon, J. Appl. Phys. 76, 5719-5723 (1994)

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  • A. Polman: Erbium ion implantation for optical doping In: Materials Synthesis and Processing Using Ion Beams : Symposium held November 29-December 3, 1993, Boston, Massachusetts, U.S.A. /ed. R.J. Culbertson, O.W. Holland, K.S. Jones and K. Maex, Materials Research Society, 1994. - pp. 385-396

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  • H.A. Atwater, K.V. Shcheglov, S.S. Wong, K.J. Vahala, R.C. Flagan, M.L. Brongersma and A. Polman: Ion beam synthesis of luminescent Si and Ge nanocrystals in a silicon dioxide matrix In: Materials Synthesis and Processing Using Ion Beams : Symposium held November 29-December 3, 1993, Boston, Massachusetts, U.S.A. /ed. R.J. Culbertson, O.W. Holland, K.S. Jones and K. Maex, Materials Research Society, 1994. - pp. 409-420

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  • R. Serna, M. Lohmeier, E. Vlieg and A. Polman: 1,5 µm Room-temperature luminescence from erbium in oxygen-doped silicon grown by molecular beam epitaxy In: 1994 Conference on Lasers and Electro-Optics Europe, RAI Congress Centre Amsterdam, The Netherlands, 28 August-2 September, 1994, New York: IEEE, 1994. - pp. 375-376

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  • E. Snoeks, A. Polman and C.A. Volkert, Densification, anisotropic deformation, and plastic flow of SiO2 during MeV heavy ion irradiation, Appl. Phys. Lett. 65, 2487-2489 (1994)

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