H.A. Atwater, J.T. Dickinson, D.H. Lowndes and A. Polman: Film Synthesis and Growth using Energetic Beams: Symposium held April 17-20, 1995, San Francisco, California, U.S.A.In: , Warrendale: MRS, 1995. (Materials Research Society Symposium Proceedings;)
E. Alves, M.F. da Silva, G.N. van den Hoven, A. Polman, A.A. Melo and J.C. Soares, Incorporation and stability of erbium in sapphire by ion implantation, Nucl. Instrum. Methods Phys. Res., Sect B 106, 429-432 (1995)
A. Polman, G.N. van den Hoven, J.S. Custer, J.H. Shin, R. Serna and P.F.A. Alkemade, Erbium in crystal silicon: optical activation, excitation, and concentration limits, J. Appl. Phys. 77, 1256-1262 (1995)
G. Franzò, F. Priolo, S. Coffa, A. Polman and A. Carnera, Room temperature light emitting silicon diodes fabricated by erbium ion implantation, Nucl. Instrum. Methods Phys. Res., Sect B 96, 374-377 (1995)
S. Lombardo, S.U. Campisano, G.N. van den Hoven and A. Polman, Room-temperature luminescence in semi-insulating polycrystalline silicon implanted with Er, Nucl. Instrum. Methods Phys. Res., Sect B 96, 378-381 (1995)
H.A. Atwater, K.V. Shcheglov, S.S. Wong, K.J. Vahala, R.C. Flagan, M.L. Brongersma and A. Polman: Ion beam synthesis of luminescent Si and Ge nanocrystals in a silicon dioxide matrixIn: Materials Synthesis and Processing Using Ion Beams : Symposium held November 29-December 3, 1993, Boston, Massachusetts, U.S.A. /ed. R.J. Culbertson, O.W. Holland, K.S. Jones and K. Maex, Materials Research Society, 1994. - pp. 409-420
R. Serna, M. Lohmeier, E. Vlieg and A. Polman: 1,5 µm Room-temperature luminescence from erbium in oxygen-doped silicon grown by molecular beam epitaxyIn: 1994 Conference on Lasers and Electro-Optics Europe, RAI Congress Centre Amsterdam, The Netherlands, 28 August-2 September, 1994, New York: IEEE, 1994. - pp. 375-376
E. Snoeks, A. Polman and C.A. Volkert, Densification, anisotropic deformation, and plastic flow of SiO2 during MeV heavy ion irradiation, Appl. Phys. Lett. 65, 2487-2489 (1994)
J.S. Custer, A. Polman and H.M. van Pinxteren, Erbium in crystal silicon: segregation and trapping during solid phase epitaxy of amorphous silicon, J. Appl. Phys. 75, 2809-2817 (1994)