S. Lombardo, S.U. Campisano, G.N. van den Hoven and A. Polman, Erbium in oxygen-doped silicon: electroluminescence, J. Appl. Phys. 77, 6504-6510 (1995)
C.M. Yang, K.V. Shcheglov, M.L. Brongersma, A. Polman and H.A. Atwater: Correlation of size and photoluminescence for Ge nanocrystals in SiO2 matricesIn: Microcrystalline and Nanocrystalline Semiconductors /ed. R.W. Collins, C.C. Tsai, M. Hirose, F. Koch and L. Brus, Materials Research Society, 1995. - pp. 181-186
E. Snoeks, G.N. van den Hoven, A. Polman, B.L.M. Hendriksen, M.B.J. Diemeer and F. Priolo, Cooperative upconversion in erbium-implanted sodalime silicate glass optical waveguides, J. Opt. Soc. Am. B 12, 1468-1474 (1995)
E. Snoeks, Thomas Weber, A. Cacciato and A. Polman, MeV ion irradiation-induced creation and relaxation of mechanical stress in silica, J. Appl. Phys. 78, 4723-4732 (1995)
R. Serna, M. Lohmeier, P.M. Zagwijn, E. Vlieg and A. Polman, Segregation and trapping of erbium during silicon molecular beam epitaxy, Appl. Phys. Lett. 66, 1385-1387 (1995)
M. Fleuster, C. Buchal, E. Snoeks and A. Polman: Optical and structural properties of MeV erbium implanted LiNbO3In: Materials Synthesis and Processing Using Ion Beams : Symposium held November 29-December 3, 1993, Boston, Massachusetts, U.S.A. /ed. R.J. Culbertson, O.W. Holland, K.S. Jones and K. Maex, Materials Research Society, 1994. - pp. 463-468
P.M. Zagwijn, W.J. Huisman, A. Polman, E. Vlieg, A.H. Reader and D.J. Gravesteijn, Transient diffusion of Ga in amorphous silicon, J. Appl. Phys. 76, 5719-5723 (1994)
A. Polman: Erbium ion implantation for optical dopingIn: Materials Synthesis and Processing Using Ion Beams : Symposium held November 29-December 3, 1993, Boston, Massachusetts, U.S.A. /ed. R.J. Culbertson, O.W. Holland, K.S. Jones and K. Maex, Materials Research Society, 1994. - pp. 385-396
H.A. Atwater, K.V. Shcheglov, S.S. Wong, K.J. Vahala, R.C. Flagan, M.L. Brongersma and A. Polman: Ion beam synthesis of luminescent Si and Ge nanocrystals in a silicon dioxide matrixIn: Materials Synthesis and Processing Using Ion Beams : Symposium held November 29-December 3, 1993, Boston, Massachusetts, U.S.A. /ed. R.J. Culbertson, O.W. Holland, K.S. Jones and K. Maex, Materials Research Society, 1994. - pp. 409-420
R. Serna, M. Lohmeier, E. Vlieg and A. Polman: 1,5 µm Room-temperature luminescence from erbium in oxygen-doped silicon grown by molecular beam epitaxyIn: 1994 Conference on Lasers and Electro-Optics Europe, RAI Congress Centre Amsterdam, The Netherlands, 28 August-2 September, 1994, New York: IEEE, 1994. - pp. 375-376