J.H. Shin, G.N. van den Hoven and A. Polman, Direct experimental evidence for trap-state mediated excitation of Er3+ in silicon, Appl. Phys. Lett. 67, 377-379 (1995)
G.N. van den Hoven, J.H. Shin, A. Polman, S. Lombardo and S.U. Campisano, Erbium in oxygen-doped silicon: optical excitation, J. Appl. Phys. 78, 2642-2650 (1995)
F. Priolo, G. Franzò, S. Coffa, A. Polman, S. Libertino, R.C. Barklie and D. Carey, The erbium-impurity interaction and its effects on the 1.54 µm luminescence of Er3+ in crystalline silicon, J. Appl. Phys. 78, 3874-3882 (1995)
E. Snoeks, A. Lagendijk and A. Polman, Measuring and modifying the spontaneous emission rate of erbium near an interface, Phys. Rev. Lett. 74, (13), 2459-2462 (1995)
G.N. van den Hoven, E. Snoeks, A. Polman, C. van Dam, J.W.M. van Uffelen and M.K. Smit: Optical gain in erbium-implanted Al2O3 waveguidesIn: ECIO '95 Proceedings 7th European Conference on Integrated Optics, April 3-6, 1995 Delft, The Netherlands : Regular and Invited Papers /ed. L. Shi, L.H. Spiekman and X.J.M. Leijtens, Delft University Press, 1995. - pp. 229-232
A. Polman, E. Snoeks, G.N. van den Hoven, M.L. Brongersma, R. Serna, J.H. Shin, P.G. Kik and E. Radius, Ion beam synthesis of planar opto-electronic devices, Nucl. Instrum. Methods Phys. Res., Sect B 106, 393-399 (1995)
E. Snoeks, A. Lagendijk, M.L. Brongersma and A. Polman: Spontaneous emission rate of erbium implanted in silica near a dielectric interfaceIn: 1994 5th European Quantum Electronics Conference, RAI Congress Centre Amsterdam, The Netherlands 28 August - 2 September, 1994, New York: IEEE, 1994.
R. Serna, E. Snoeks, G.N. van den Hoven and A. Polman, 1.5 µm room-temperature luminescence from Er-implanted oxygen-doped silicon epitaxial films grown by molecular beam epitaxy, J. Appl. Phys. 75, 2644-2647 (1994)
G. Franzò, F. Priolo, S. Coffa, A. Polman and A. Carnera, Room-temperature electroluminescence from Er-doped crystalline Si, Appl. Phys. Lett. 64, 2235-2237 (1994)
S. Coffa, F. Priolo, G. Franzò, A. Polman and R. Serna, Temperature dependence and quenching processes of the intra-4¦ luminescence of Er in crystalline Si, Phys. Rev. B 49, 16313-16320 (1994)