Publications - Photonic Materials

J.S. Custer, A. Polman and H.M. van Pinxteren, Erbium in crystal silicon: segregation and trapping during solid phase epitaxy of amorphous silicon, J. Appl. Phys. 75, 2809-2817 (1994)

M. Fleuster, C. Buchal, E. Snoeks and A. Polman, Optical and structural properties of MeV erbium implanted LiNbO3, J. Appl. Phys. 75, 173-180 (1994)

G.N. van den Hoven, E. Radius, E. Snoeks, A. Polman, C. van Dam, J.W.M. van Uffelen and M.K. Smit: Er3+ absorption and optical gain in Al2O3 waveguides In: 1994 Conference on Lasers and Electro-Optics Europe, RAI Congress Centre Amsterdam, The Netherlands, 28 August-2 September, 1994, New York: IEEE, 1994.

E. Snoeks, A. Lagendijk, M.L. Brongersma and A. Polman: Spontaneous emission rate of erbium implanted in silica near a dielectric interface In: 1994 5th European Quantum Electronics Conference, RAI Congress Centre Amsterdam, The Netherlands 28 August - 2 September, 1994, New York: IEEE, 1994.

R. Serna, E. Snoeks, G.N. van den Hoven and A. Polman, 1.5 µm room-temperature luminescence from Er-implanted oxygen-doped silicon epitaxial films grown by molecular beam epitaxy, J. Appl. Phys. 75, 2644-2647 (1994)

G. Franzò, F. Priolo, S. Coffa, A. Polman and A. Carnera, Room-temperature electroluminescence from Er-doped crystalline Si, Appl. Phys. Lett. 64, 2235-2237 (1994)

A. Polman, J.S. Custer, E. Snoeks and G.N. van den Hoven, Incorporation of high concentrations of erbium in crystal silicon, Appl. Phys. Lett. 62, 507-509 (1993)

E. Alves, M.F. da Silva, A.A. Melo, J.C. Soares, G.N. van den Hoven, A. Polman, K.R. Evans and C.R. Jones: Lattice location and photoluminescence of Er in GaAs and Al0.5Ga0.5As In: Rare Earth Doped Semiconductors : Symposium held April 13-15, 1993, San Francisco, California, U.S.A. /ed. G.S. Pomrenke, P.B. Klein and D.W. Langer, Materials Research Society, 1993. - pp. 175-180

S. Lombardo, S.U. Campisano, G.N. van den Hoven, A. Cacciato and A. Polman: Room-temperature luminescence from Er-implanted semi-insulating polycrystalline silicon In: 4th European Quantum Electronics Conference and 7th Italian Conference on Quantum Electronics, September 10-13, 1993, Firenze, Italy : Technical Digest ; vol. I /ed. P. De Natale, R. Meucci and S. Pelli, European Physical Society, 1993. - pp. 500-503

J.S. Custer, A. Polman, E. Snoeks and G.N. van den Hoven: High concentrations of erbium in crystal silicon by thermal or ion-beam-induced epitaxy of erbium-implanted amorphous silicon In: Rare Earth Doped Semiconductors /ed. G.S. Pomrenke, P.B. Klein and D.W. Langer, Pittsburgh: MRS, 1993. - pp. 101-105