G. Franzò, F. Priolo, S. Coffa, A. Polman and A. Carnera, Room temperature light emitting silicon diodes fabricated by erbium ion implantation, Nucl. Instrum. Methods Phys. Res., Sect B 96, 374-377 (1995)
S. Lombardo, S.U. Campisano, G.N. van den Hoven and A. Polman, Room-temperature luminescence in semi-insulating polycrystalline silicon implanted with Er, Nucl. Instrum. Methods Phys. Res., Sect B 96, 378-381 (1995)
J.H. Shin, G.N. van den Hoven and A. Polman, Direct experimental evidence for trap-state mediated excitation of Er3+ in silicon, Appl. Phys. Lett. 67, 377-379 (1995)
G.N. van den Hoven, J.H. Shin, A. Polman, S. Lombardo and S.U. Campisano, Erbium in oxygen-doped silicon: optical excitation, J. Appl. Phys. 78, 2642-2650 (1995)
E. Snoeks, A. Polman and C.A. Volkert, Densification, anisotropic deformation, and plastic flow of SiO2 during MeV heavy ion irradiation, Appl. Phys. Lett. 65, 2487-2489 (1994)
J.S. Custer, A. Polman and H.M. van Pinxteren, Erbium in crystal silicon: segregation and trapping during solid phase epitaxy of amorphous silicon, J. Appl. Phys. 75, 2809-2817 (1994)
G.N. van den Hoven, E. Radius, E. Snoeks, A. Polman, C. van Dam, J.W.M. van Uffelen and M.K. Smit: Er3+ absorption and optical gain in Al2O3 waveguidesIn: 1994 Conference on Lasers and Electro-Optics Europe, RAI Congress Centre Amsterdam, The Netherlands, 28 August-2 September, 1994, New York: IEEE, 1994.
E. Snoeks, A. Lagendijk, M.L. Brongersma and A. Polman: Spontaneous emission rate of erbium implanted in silica near a dielectric interfaceIn: 1994 5th European Quantum Electronics Conference, RAI Congress Centre Amsterdam, The Netherlands 28 August - 2 September, 1994, New York: IEEE, 1994.
R. Serna, E. Snoeks, G.N. van den Hoven and A. Polman, 1.5 µm room-temperature luminescence from Er-implanted oxygen-doped silicon epitaxial films grown by molecular beam epitaxy, J. Appl. Phys. 75, 2644-2647 (1994)
