M. Fleuster, C. Buchal, E. Snoeks and A. Polman: Optical and structural properties of MeV erbium implanted LiNbO3In: Materials Synthesis and Processing Using Ion Beams : Symposium held November 29-December 3, 1993, Boston, Massachusetts, U.S.A. /ed. R.J. Culbertson, O.W. Holland, K.S. Jones and K. Maex, Materials Research Society, 1994. - pp. 463-468
P.M. Zagwijn, W.J. Huisman, A. Polman, E. Vlieg, A.H. Reader and D.J. Gravesteijn, Transient diffusion of Ga in amorphous silicon, J. Appl. Phys. 76, 5719-5723 (1994)
A. Polman: Erbium ion implantation for optical dopingIn: Materials Synthesis and Processing Using Ion Beams : Symposium held November 29-December 3, 1993, Boston, Massachusetts, U.S.A. /ed. R.J. Culbertson, O.W. Holland, K.S. Jones and K. Maex, Materials Research Society, 1994. - pp. 385-396
G.N. van den Hoven, E. Snoeks, A. Polman, J.W.M. van Uffelen, Y.S. Oei and M.K. Smit, Photoluminescence characterization of Er-implanted Al2O3 films, Appl. Phys. Lett. 62, 3065-3067 (1993)
G.N. van den Hoven, E. Snoeks, A. Polman, J.W.M. van Uffelen, Y.S. Oei and M.K. Smit: High concentration optical doping of Al2O3 waveguide films by Er ion implantationIn: Proceedings of the 6th European Conference on Integrated Optics (ECIO'93) and Technical Exhibit, April 18-22, 1993, Neuchâtel, Switzerland /ed. P. Roth, [s.n.], 1993.
A. Polman, J.S. Custer, E. Snoeks and G.N. van den Hoven, Optical doping of silicon with erbium by ion implantation, Nucl. Instrum. Methods Phys. Res., Sect B 80/81, 653-658 (1993)
S. Lombardo, S.U. Campisano, G.N. van den Hoven, A. Cacciato and A. Polman, Room-temperature luminescence from Er-implanted semi-insulating polycrystalline silicon, Appl. Phys. Lett. 63, 1942-1944 (1993)
A. Polman and J.M. Poate, Ion irradiation damage in Er-doped silica probed by the Er3+ luminescence lifetime at 1.535 mm, J. Appl. Phys. 73, 1669-1674 (1993)
E. Snoeks, G.N. van den Hoven and A. Polman, Optical doping of soda-lime-silicate glass with erbium by ion implantation, J. Appl. Phys. 73, 8179-8183 (1993)