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D. Hoonhout and F.W. Saris: Threshold energy density for pulsed laser annealing of siliconIn: Laser and Electron-Beam Solid Interactions and Materials Processing : Proceedings of the Materials Research Society Annual Meeting, November 1980, Copley Plaza Hotel, Boston, Massachusetts, U.S.A. /ed. J.F. Gibbons, L.D. Hess and T.W. Sigmon, North Holland, 1981. - pp. 31-37
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M.L. Swanson, L.M. Howe, F.W. Saris and A.F. Quenneville: A channeling study of defect-Boron complexes in SiIn: Defects in Semiconductors : Proceedings of the Materials Research Society Annual Meeting, November 1980, Copley Plaza Hotel, Boston, Massachusetts, U.S.A. /ed. J. Narayan and T.Y. Tan, North-Holland, 1981. - pp. 71-78
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J. Michel, E. Fabre, I. Yamada, D. Hoonhout and F.W. Saris: Characterization of ion-implanted and pulse-laser-annealed junctions; application to silicon solar cellsIn: Laser and Electron Beam Processing of Materials : Papers presented at the Symposium on "Laser and Electron Beam Processing of Materials," held in Cambridge, Mass., November 27-30, 1979 /ed. C.W. White and P.S. Peercy, Academic Press, 1980. - pp. 664-670
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