• A.R. Schlatmann, R. Hoekstra, H.O. Folkerts and R. Morgenstern, Electron capture and excitation in He2+-Na collisions, J. Phys. B: At., Mol. Opt. Phys. 25, 3155-3164 (1992)

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  • R. Ikan, P. Ioselis, Y. Rubinsztain, Z. Aizenshtat, I. Miloslavsky, S. Yariv, R. Pugmire, L.L. Anderson, W.R. Woolfenden, I.R. Kaplan, T. Dorsey, K.E. Peters, J.J. Boon, J.W. de Leeuw, R. Ishiwatari, S. Morinaga, S. Yamamoto, T. Macihara, M. Muller-Vonmoos and A. Rub, Chemical, isotopic, spectroscopic and geochemical aspects of natural and synthetic humic substances, Sci. Total Environ. 117/118, 1-12 (1992)

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  • W.F.J. Slijkerman, P.M. Zagwijn, J.F. van der Veen, D.J. Gravesteijn and G.F.A. van de Walle, The interaction of Sb overlayers with Si(001), Surf. Sci. 262, 25-32 (1992)

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  • J.-B. Sanders and J.W.M. Frenken, On the displacement statistics of an individual step edge in a vicinal surface, Surf. Sci. 275, 142-155 (1992)

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  • J.S. Custer, A. Battaglia, M. Saggio and F. Priolo, Growth-site-limited crystallization of amorphous silicon, Phys. Rev. Lett. 69, 780-783 (1992)

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  • R.J. Vos and M. Gavrila, Effective stabilization of Rydberg states at current laser performances, Phys. Rev. Lett. 68, 170-173 (1992)

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  • D. Frenkel, F. van Luijn and P.-M. Binder, Evidence for universal asymptotic decay of velocity fluctuations in Lorentz gases, Europhys. Lett. 20, 7-12 (1992)

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  • S. Roorda, R.A. Hakvoort, A. van Veen, P.A. Stolk and F.W. Saris, Structural and electrical defects in amorphous silicon probed by positrons and electrons, J. Appl. Phys. 72, 5145-5152 (1992)

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  • A.G. Cullis, A. Polman, P.W. Smith, D.C. Jacobson, J.M. Poate and C.R. Whitehouse, The nature of keV and MeV ion damage in AlxGa1-xAs/GaAs and AlAs/GaAs heterostructures, Nucl. Instrum. Methods Phys. Res., Sect B 62, 463-468 (1992)

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  • M.P. de Boer and H.G. Muller, Observation of large populations in excited states after short-pulse multiphoton ionization, Phys. Rev. Lett. 68, 2747-2750 (1992)

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