A. Polman, J.S. Custer, E. Snoeks and G.N. van den Hoven, Optical doping of silicon with erbium by ion implantation, Nucl. Instrum. Methods Phys. Res., Sect B 80/81, 653-658 (1993)
S. Lombardo, S.U. Campisano, G.N. van den Hoven, A. Cacciato and A. Polman, Room-temperature luminescence from Er-implanted semi-insulating polycrystalline silicon, Appl. Phys. Lett. 63, 1942-1944 (1993)
A. Polman and J.M. Poate, Ion irradiation damage in Er-doped silica probed by the Er3+ luminescence lifetime at 1.535 mm, J. Appl. Phys. 73, 1669-1674 (1993)
A.G. Cullis, A. Polman, P.W. Smith, D.C. Jacobson, J.M. Poate and C.R. Whitehouse, The nature of keV and MeV ion damage in AlxGa1-xAs/GaAs and AlAs/GaAs heterostructures, Nucl. Instrum. Methods Phys. Res., Sect B 62, 463-468 (1992)
A. Polman, M.A. Marcus, D.C. Jacobson and J.M. Poate: Local structure around Er in MeV Er-implanted silicaIn: Optical Waveguide Materials : Symposium held December 2-4, 1991, Boston, Massachusette, U.S.A. /ed. M.M. Broer, G.H. Sigel, R.Th. Kersten and H. Kawazoe, Materials Research Society, 1992. - pp. 381-386
A.G. Cullis, D.C. Jacobson, A. Polman, P.W. Smith, J.M. Poate and C.R. Whitehouse: The energy dependence of ion damage in AlxGa1-xAs/GaAs heterostructures and the effects of implanted impurityIn: Phase Formation and Modification by Beam-Solid Interactions : Symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A. /ed. G.S. Was, L.E. Rehn and D.M. Follstaedt, Materials Research Society, 1992. - pp. 229-234
J.S. Custer, E. Snoeks and A. Polman: Photoluminescence of erbium in amorphous silicon: Structural relaxation and optical dopingIn: Phase Formation and Modification by Beam-Solid Interactions : Symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A. /ed. G.S. Was, L.E. Rehn and D.M. Follstaedt, Materials Research Society, 1992. - pp. 51-56
A. Polman, D.C. Jacobson and J.M. Poate: Erbium-defect interactions in silica films implanted with MeV Er ionsIn: Phase Formation and Modification by Beam-Solid Interactions : Symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A. /ed. G.S. Was, L.E. Rehn and D.M. Follstaedt, Materials Research Society, 1992. - pp. 377-382
C.A. Volkert and A. Polman: Radiation-enhanced plastic flow of covalent materials during ion irradationIn: Phase Formation and Modification by Beam-Solid Interactions : Symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A. /ed. G.S. Was, L.E. Rehn and D.M. Follstaedt, Materials Research Society, 1992. - pp. 3-14
S. Roorda, J.S. Custer, W.C. Sinke, J.M. Poate, D.C. Jacobson, A. Polman and F. Spaepen, Structural relaxation in amorphous silicon and the role of network defects, Nucl. Instrum. Methods Phys. Res., Sect B 59/60, 344-352 (1991)