S. Lombardo, S.U. Campisano, G.N. van den Hoven, A. Cacciato and A. Polman: Room-temperature luminescence from Er-implanted semi-insulating polycrystalline siliconIn: 4th European Quantum Electronics Conference and 7th Italian Conference on Quantum Electronics, September 10-13, 1993, Firenze, Italy : Technical Digest ; vol. I /ed. P. De Natale, R. Meucci and S. Pelli, European Physical Society, 1993. - pp. 500-503
J.S. Custer, A. Polman, E. Snoeks and G.N. van den Hoven: High concentrations of erbium in crystal silicon by thermal or ion-beam-induced epitaxy of erbium-implanted amorphous siliconIn: Rare Earth Doped Semiconductors /ed. G.S. Pomrenke, P.B. Klein and D.W. Langer, Pittsburgh: MRS, 1993. - pp. 101-105
G.N. van den Hoven, E. Snoeks, A. Polman, J.W.M. van Uffelen, Y.S. Oei and M.K. Smit, Photoluminescence characterization of Er-implanted Al2O3 films, Appl. Phys. Lett. 62, 3065-3067 (1993)
G.N. van den Hoven, E. Snoeks, A. Polman, J.W.M. van Uffelen, Y.S. Oei and M.K. Smit: High concentration optical doping of Al2O3 waveguide films by Er ion implantationIn: Proceedings of the 6th European Conference on Integrated Optics (ECIO'93) and Technical Exhibit, April 18-22, 1993, Neuchâtel, Switzerland /ed. P. Roth, [s.n.], 1993.
A. Polman, J.S. Custer, E. Snoeks and G.N. van den Hoven, Optical doping of silicon with erbium by ion implantation, Nucl. Instrum. Methods Phys. Res., Sect B 80/81, 653-658 (1993)
S. Lombardo, S.U. Campisano, G.N. van den Hoven, A. Cacciato and A. Polman, Room-temperature luminescence from Er-implanted semi-insulating polycrystalline silicon, Appl. Phys. Lett. 63, 1942-1944 (1993)
A. Polman and J.M. Poate, Ion irradiation damage in Er-doped silica probed by the Er3+ luminescence lifetime at 1.535 mm, J. Appl. Phys. 73, 1669-1674 (1993)
E. Snoeks, G.N. van den Hoven and A. Polman, Optical doping of soda-lime-silicate glass with erbium by ion implantation, J. Appl. Phys. 73, 8179-8183 (1993)
A.G. Cullis, A. Polman, P.W. Smith, D.C. Jacobson, J.M. Poate and C.R. Whitehouse, The nature of keV and MeV ion damage in AlxGa1-xAs/GaAs and AlAs/GaAs heterostructures, Nucl. Instrum. Methods Phys. Res., Sect B 62, 463-468 (1992)