Publications - Photonic Materials

E. Snoeks, A. Lagendijk, M.L. Brongersma and A. Polman: Spontaneous emission rate of erbium implanted in silica near a dielectric interface In: 1994 5th European Quantum Electronics Conference, RAI Congress Centre Amsterdam, The Netherlands 28 August - 2 September, 1994, New York: IEEE, 1994.

R. Serna, E. Snoeks, G.N. van den Hoven and A. Polman, 1.5 µm room-temperature luminescence from Er-implanted oxygen-doped silicon epitaxial films grown by molecular beam epitaxy, J. Appl. Phys. 75, 2644-2647 (1994)

A. Polman, E. Snoeks, G.N. van den Hoven, J.S. Custer, B.L.M. Hendriksen, M.B.J. Diemeer, J.W.M. van Uffelen, Y.S. Oei, M.K. Smit, M. Fleuster and C. Buchal: Erbium ion implantation doping of opto-electronic materials operating at 1,5 In: 19th European Conference on Optical Communication, September 12-16, 1993, Centre de Congrès det d'Expositions, Montreaux, Switzerland, Proceedings vol. 2 (Regular papers), [s.n.], 1993. - pp. 61-64

A. Polman, J.S. Custer, E. Snoeks and G.N. van den Hoven, Incorporation of high concentrations of erbium in crystal silicon, Appl. Phys. Lett. 62, 507-509 (1993)

E. Alves, M.F. da Silva, A.A. Melo, J.C. Soares, G.N. van den Hoven, A. Polman, K.R. Evans and C.R. Jones: Lattice location and photoluminescence of Er in GaAs and Al0.5Ga0.5As In: Rare Earth Doped Semiconductors : Symposium held April 13-15, 1993, San Francisco, California, U.S.A. /ed. G.S. Pomrenke, P.B. Klein and D.W. Langer, Materials Research Society, 1993. - pp. 175-180

S. Lombardo, S.U. Campisano, G.N. van den Hoven, A. Cacciato and A. Polman: Room-temperature luminescence from Er-implanted semi-insulating polycrystalline silicon In: 4th European Quantum Electronics Conference and 7th Italian Conference on Quantum Electronics, September 10-13, 1993, Firenze, Italy : Technical Digest ; vol. I /ed. P. De Natale, R. Meucci and S. Pelli, European Physical Society, 1993. - pp. 500-503

J.S. Custer, A. Polman, E. Snoeks and G.N. van den Hoven: High concentrations of erbium in crystal silicon by thermal or ion-beam-induced epitaxy of erbium-implanted amorphous silicon In: Rare Earth Doped Semiconductors /ed. G.S. Pomrenke, P.B. Klein and D.W. Langer, Pittsburgh: MRS, 1993. - pp. 101-105

P.A. Stolk, A. Polman and W.C. Sinke, Experimental test of kinetic theories for heterogeneous freezing in silicon, Phys. Rev. B 47, 5-13 (1993)

G.N. van den Hoven, E. Snoeks, A. Polman, J.W.M. van Uffelen, Y.S. Oei and M.K. Smit, Photoluminescence characterization of Er-implanted Al2O3 films, Appl. Phys. Lett. 62, 3065-3067 (1993)

G.N. van den Hoven, E. Snoeks, A. Polman, J.W.M. van Uffelen, Y.S. Oei and M.K. Smit: High concentration optical doping of Al2O3 waveguide films by Er ion implantation In: Proceedings of the 6th European Conference on Integrated Optics (ECIO'93) and Technical Exhibit, April 18-22, 1993, Neuchâtel, Switzerland /ed. P. Roth, [s.n.], 1993.