Publications - Photonic Materials

E. Snoeks, G.N. van den Hoven, A. Polman, B.L.M. Hendriksen and M.B.J. Diemeer: Doping fibre-compatible ion-exchanged channel waveguides with erbium by ion implantation In: Proceedings of the 6th European Conference on Integrated Optics (ECIO'93) and Technical Exhibit, April 18-22, 1993, Neuchâtel, Switzerland /ed. P. Roth, [s.n.], 1993.

A. Polman, E. Snoeks, G.N. van den Hoven, J.S. Custer, B.L.M. Hendriksen, M.B.J. Diemeer, J.W.M. van Uffelen, Y.S. Oei, M.K. Smit, M. Fleuster and C. Buchal: Erbium ion implantation doping of opto-electronic materials operating at 1,5 In: 19th European Conference on Optical Communication, September 12-16, 1993, Centre de Congrès det d'Expositions, Montreaux, Switzerland, Proceedings vol. 2 (Regular papers), [s.n.], 1993. - pp. 61-64

A. Polman, J.S. Custer, E. Snoeks and G.N. van den Hoven, Incorporation of high concentrations of erbium in crystal silicon, Appl. Phys. Lett. 62, 507-509 (1993)

E. Alves, M.F. da Silva, A.A. Melo, J.C. Soares, G.N. van den Hoven, A. Polman, K.R. Evans and C.R. Jones: Lattice location and photoluminescence of Er in GaAs and Al0.5Ga0.5As In: Rare Earth Doped Semiconductors : Symposium held April 13-15, 1993, San Francisco, California, U.S.A. /ed. G.S. Pomrenke, P.B. Klein and D.W. Langer, Materials Research Society, 1993. - pp. 175-180

S. Lombardo, S.U. Campisano, G.N. van den Hoven, A. Cacciato and A. Polman: Room-temperature luminescence from Er-implanted semi-insulating polycrystalline silicon In: 4th European Quantum Electronics Conference and 7th Italian Conference on Quantum Electronics, September 10-13, 1993, Firenze, Italy : Technical Digest ; vol. I /ed. P. De Natale, R. Meucci and S. Pelli, European Physical Society, 1993. - pp. 500-503

J.S. Custer, A. Polman, E. Snoeks and G.N. van den Hoven: High concentrations of erbium in crystal silicon by thermal or ion-beam-induced epitaxy of erbium-implanted amorphous silicon In: Rare Earth Doped Semiconductors /ed. G.S. Pomrenke, P.B. Klein and D.W. Langer, Pittsburgh: MRS, 1993. - pp. 101-105

C.A. Volkert and A. Polman: Radiation-enhanced plastic flow of covalent materials during ion irradation In: Phase Formation and Modification by Beam-Solid Interactions : Symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A. /ed. G.S. Was, L.E. Rehn and D.M. Follstaedt, Materials Research Society, 1992. - pp. 3-14

A.G. Cullis, A. Polman, P.W. Smith, D.C. Jacobson, J.M. Poate and C.R. Whitehouse, The nature of keV and MeV ion damage in AlxGa1-xAs/GaAs and AlAs/GaAs heterostructures, Nucl. Instrum. Methods Phys. Res., Sect B 62, 463-468 (1992)

A. Polman, M.A. Marcus, D.C. Jacobson and J.M. Poate: Local structure around Er in MeV Er-implanted silica In: Optical Waveguide Materials : Symposium held December 2-4, 1991, Boston, Massachusette, U.S.A. /ed. M.M. Broer, G.H. Sigel, R.Th. Kersten and H. Kawazoe, Materials Research Society, 1992. - pp. 381-386

A.G. Cullis, D.C. Jacobson, A. Polman, P.W. Smith, J.M. Poate and C.R. Whitehouse: The energy dependence of ion damage in AlxGa1-xAs/GaAs heterostructures and the effects of implanted impurity In: Phase Formation and Modification by Beam-Solid Interactions : Symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A. /ed. G.S. Was, L.E. Rehn and D.M. Follstaedt, Materials Research Society, 1992. - pp. 229-234