Publications - Photonic Materials

E. Snoeks, A. Lagendijk, M.L. Brongersma and A. Polman: Spontaneous emission rate of erbium implanted in silica near a dielectric interface In: 1994 5th European Quantum Electronics Conference, RAI Congress Centre Amsterdam, The Netherlands 28 August - 2 September, 1994, New York: IEEE, 1994.

R. Serna, E. Snoeks, G.N. van den Hoven and A. Polman, 1.5 µm room-temperature luminescence from Er-implanted oxygen-doped silicon epitaxial films grown by molecular beam epitaxy, J. Appl. Phys. 75, 2644-2647 (1994)

G. Franzò, F. Priolo, S. Coffa, A. Polman and A. Carnera, Room-temperature electroluminescence from Er-doped crystalline Si, Appl. Phys. Lett. 64, 2235-2237 (1994)

S. Coffa, F. Priolo, G. Franzò, A. Polman and R. Serna, Temperature dependence and quenching processes of the intra-4¦ luminescence of Er in crystalline Si, Phys. Rev. B 49, 16313-16320 (1994)

M. Fleuster, C. Buchal, E. Snoeks and A. Polman, Rapid thermal annealing of MeV erbium implanted LiNbO3 single crystals for optical doping, Appl. Phys. Lett. 65, 225-227 (1994)

F. Priolo, G. Franzò, S. Coffa, A. Polman, V. Bellani, A. Carnera and C. Spinella: Erbium implantation in silicon: A way towards Si-based optoelectronics In: Materials Synthesis and Processing Using Ion Beams : Symposium held November 29-December 3, 1993, Boston, Massachusetts, U.S.A. /ed. R.J. Culbertson, O.W. Holland, K.S. Jones and K. Maex, Materials Research Society, 1994. - pp. 397-408

S. Lombardo, S.U. Campisano, G.N. van den Hoven, A. Cacciato and A. Polman: Room-temperature luminescence from Er-implanted semi-insulating polycrystalline silicon In: 4th European Quantum Electronics Conference and 7th Italian Conference on Quantum Electronics, September 10-13, 1993, Firenze, Italy : Technical Digest ; vol. I /ed. P. De Natale, R. Meucci and S. Pelli, European Physical Society, 1993. - pp. 500-503

J.S. Custer, A. Polman, E. Snoeks and G.N. van den Hoven: High concentrations of erbium in crystal silicon by thermal or ion-beam-induced epitaxy of erbium-implanted amorphous silicon In: Rare Earth Doped Semiconductors /ed. G.S. Pomrenke, P.B. Klein and D.W. Langer, Pittsburgh: MRS, 1993. - pp. 101-105

P.A. Stolk, A. Polman and W.C. Sinke, Experimental test of kinetic theories for heterogeneous freezing in silicon, Phys. Rev. B 47, 5-13 (1993)

G.N. van den Hoven, E. Snoeks, A. Polman, J.W.M. van Uffelen, Y.S. Oei and M.K. Smit, Photoluminescence characterization of Er-implanted Al2O3 films, Appl. Phys. Lett. 62, 3065-3067 (1993)