• J.W.J. Verschuur, J.T.N. Kimman, H.B. van Linden van den Heuvell and M.J. van der Wiel, Rydberg series in NO excited by resonant MPI via the A2S + (n' = 1, J') intermediate state, Chem. Phys. 103, 359-373 (1986)

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  • R. de Jonge, T.S. Baller, M.G. Tenner, A.E. de Vries and K.J. Snowdon, Internal energy distribution of sputtered surfur molecules, Nucl. Instrum. Methods Phys. Res., Sect B 17, 213-226 (1986)

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  • M.R. Spalburg, J.H. Los and A.Z. Devdariani, On the validity of simple two-state electronic transition models, Chem. Phys. 103, 253-263 (1986)

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  • P.C. Zalm, C.W.T. Bulle-Lieuwma and P.M.J. Marée, Molecuulbundel-epitaxie van silicium op GaP en GaAs, Philips Tech. Tijdschr. 43, 166-178 (1986)

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  • J.J.P. Bruines, R.P.M. van Hal, H.M.J. Boots, A. Polman and F.W. Saris, Time-resolved reflectivity measurements during explosive crystallization of amorphous silicon, Appl. Phys. Lett. 49, 1160-1162 (1986)

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  • M. Miyao, A. Polman, W.C. Sinke, F.W. Saris and R. van Kemp, Electron irradiation-activated low-temperature annealing of phosphorus-implanted silicon, Appl. Phys. Lett. 48, 1132-1134 (1986)

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  • K. Murakami, H.C. Gerritsen, H. van Brug, F. Bijkerk, F.W. Saris and M.J. van der Wiel, Pulsed-laser-irradiated silicon study by time-resolved x-ray absorption (90-300 eV), Phys.Rev.Lett. 56, 655-658 (1986)

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  • H.C. Gerritsen, H. van Brug, F. Bijkerk and M.J. van der Wiel, Laser-generated plasma as soft x-ray source, J. Appl. Phys. 59, 2337-2344 (1986)

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  • T.S. Baller, D.J. Oostra, A.E. de Vries and G.N.A. van Veen, Laser-induced etching of Si with chlorine, J. Appl. Phys. 60, 2321-2326 (1986)

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  • J.W.M. Frenken, P.M.J. Marée and J.F. van der Veen, Observation of surface-initiated melting, Phys. Rev. B 34, 7506-7516 (1986)

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