Electron irradiation-activated low-temperature annealing of phosphorus-implanted silicon Back to all publications Publication date 1 January 1986 Reference M. Miyao, A. Polman, W.C. Sinke, F.W. Saris and R. van Kemp, Electron irradiation-activated low-temperature annealing of phosphorus-implanted silicon, Appl. Phys. Lett. 48, 1132-1134 (1986) Group Photonic Materials Request this article
