J.P.M. Beijers, R. Hoekstra, A.R. Schlatmann, R. Morgenstern and F.J. de Heer, State-selective electron capture in slow collisions of C6+ and O6+ with He, J. Phys. B: At., Mol. Opt. Phys. 25, 463-474 (1992)
J.H.D. Meerman, H.M. van Pinxteren and J.W.M. Frenken, Abnormale thermische expansie van het Pb(001) oppervlak: Thermische expansie van de buitenste atoomlagen, Nevacblad 30, 75-77 (1992)
J. Vrijmoeth, S. Zaima, E. Vlieg and J.W.M. Frenken, CoSi2/Si(111) interface: determination of interfacial metal coordination number, Phys. Rev. B 45, 6700-6708 (1992)
J.M.C. Thornton, A.A. Williams, J.E. MacDonald, R. van Silfhout, M.S. Finney and C. Norris, Strain relaxation during the surfactant modified epitaxial growth of Ge/Si(001), Surf. Sci. 273, 1-8 (1992)
M. Lohmeier, H.A. van der Vegt, R. van Silfhout, E. Vlieg, J.M.C. Thornton, J.E. MacDonald and P.M.L.O. Scholte, Asymmetrical dimers on the Ge(001)-2x1-Sb surface observed using X-ray diffraction, Surf. Sci. 275, 190-200 (1992)
R. Schreutelkamp, J.S. Custer, V. Raineri, W.X. Lu, J.R. Liefting, F.W. Saris, K.T.F. Janssen, P.F.H.M. van der Meulen and R.E. Kaim, The role of extended defects on transient boron diffusion in ion-implanted silicon, Mater. Sci. Eng. B 12, 307-325 (1992)
