| Reference |
R. Schreutelkamp, J.S. Custer, V. Raineri, W.X. Lu, J.R. Liefting, F.W. Saris, K.T.F. Janssen, P.F.H.M. van der Meulen and R.E. Kaim, The role of extended defects on transient boron diffusion in ion-implanted silicon, Mater. Sci. Eng. B 12, 307-325 (1992) |
