• K. Yamagiwa, H.J. Hopman, P.H. de Haan and G.C.A.M. Janssen, Low frequency instability excited by a partially neutralized relativistic electron beam, Plasma Phys. 24, 951-964 (1982)

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  • D. Hoonhout and F.W. Saris, Threshold energy density for pulsed-laser annealing of ion-implanted silicon, J. Appl. Phys. 53, 4379-4388 (1982)

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  • D. Hoonhout and F.W. Saris, Dopant redistribution by pulsed-laser annealing of ion-implanted silicon, Radiat. Eff. 66, 43-59 (1982)

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  • L. Smit, T. de Jong, D. Hoonhout and F.W. Saris, Silicon molecular beam epitaxy on arsenic-implanted and laser-processed silicon, Appl. Phys. Lett. 40, 64-65 (1982)

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  • J. Kistemaker, About the FOM-institute for Atomic and Molecular Physics in Amsterdam (1960-1982), Bull. Classe Sci., 5e Série 68, 147-160 (1982)

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  • C. de Vreugd, R.W. Wijnaendts van Resandt, J.B. Delos and J.H. Los, Energy distributions of electrons detached in Cl- + noble gas atom collisions, Chem. Phys. 68, 275-284 (1982)

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  • H.E. Roosendaal, R.A. Haring and J.-B. Sanders, Surface disruption as an observable factor in the energy distribution of sputtered particles, Nucl. Instrum. Methods Phys. Res. 194, 579-581 (1982)

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  • J.R. Haverkamp and P.G. Kistemaker, Recent Development in Pyrolysis Mass Spectrometry, Int. J. Mass Spectrom. Ion Phys. 45, 275-292 (1982)

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  • P.H. de Haan, G.C.A.M. Janssen and H.J. Hopman, Angular distribution and radial profile of a relativistic electron beam in vacuum, Plasma Phys. 24, 691-706 (1982)

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  • N.J.A. van Veen, G.N.A. van Veen, M.S. de Vries and A.E. de Vries, Photofragmentation of SnCl2 at 193 nm, Chem. Phys. 66, 465-470 (1982)

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