• M.M.B. Wijnakker and E.H.A. Granneman, A study of a weakly ionized rotating plasma, J. Phys. 40, 487-488 (1979)

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  • M. Klewer, M.J.M. Beerlage and M.J. van der Wiel, Polarisation and angular distribution of electrons elastically scattered from caesium atoms at 13-25 eV, J. Phys. B: At., Mol. Opt. Phys. 12, 525-528 (1979)

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  • P. Massmann, H.J. Hopman and J.H. Los, Negative surface ionization of hydrogen and its application to plasma diagnostics, Nucl. Instrum. Methods 165, 531-535 (1979)

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  • E.A. Gislason, A.W. Kleyn and J.H. Los, Time-dependent theory of electronic-to-vibrational energy transfer. Application to metastable argon atoms with nitrogen moecules, Chem. Phys. Lett. 67, 252-257 (1979)

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  • R.M. Tromp, R. Garrett, I. Yamada, H.E. Roosendaal and F.W. Saris, The influence of distortions on apparent surface radiation damage cross sections in Si, Radiat. Eff. Lett. 43, 217-222 (1979)

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  • J.A. van Vechten, R. Tsu and F.W. Saris, Nonthermal pulsed laser annealing of Si; plasma annealing, Phys. Lett. A 74, 422-426 (1979)

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  • J.G. Bannenberg, Accelerator systems for ion implantation research, Radiat. Eff. 44, 3-10 (1979)

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  • H. Overeijnder, R.R. Tol and A.E. de Vries, Delay times in the sputtering of atoms from alkali-halide crystals during low-energy electron bombardment, Surf. Sci. 90, 265-273 (1979)

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  • J.F. van der Veen, R.G. Smeenk, R.M. Tromp and F.W. Saris, The effect of oxygen coverage on surface relaxation of Ni(110) measured by medium energy ion scattering, Surf. Sci. 79, 212-218 (1979)

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  • D. Hoonhout and F.W. Saris, Dopant segregation in silicon by pulsed-laser annealing: a test case for the concept of thermal melting, Phys. Lett. A 74, 253-255 (1979)

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