• R.M. Tromp, E.J. van Loenen, M. Iwami and F.W. Saris, On the structure of the laser irradiated Si(111)-(1x1) surface, Solid State Commun. 44, 971-974 (1982)

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  • K. Kadota, D. Dijkkamp, R.L. van der Woude, P.G. Yan and F.J. de Heer, Excitation of Li by He2+ ion impact between 15 and 600 KeV, J. Phys. B: At., Mol. Opt. Phys. 15, 3297-3304 (1982)

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  • M.R. Spalburg and U.C. Klomp, A program to solve a set of linear coupled differential equations describing a collision process with several electronic and vibrational degrees of freedom, Comput. Phys. Commun. 28, 207-215 (1982)

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  • H.-N. Chen and A.J.H. Boerboom, A new electrostatic analyser for wide beams and its ion-optical properties, Int. J. Mass Spectrom. Ion Phys. 44, 117-127 (1982)

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  • U.C. Klomp and J.H. Los, State-to-state total cross sections for ion-pair formation, Chem. Phys. 71, 443-446 (1982)

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  • K. Yamagiwa, H.J. Hopman, P.H. de Haan and G.C.A.M. Janssen, Low frequency instability excited by a partially neutralized relativistic electron beam, Plasma Phys. 24, 951-964 (1982)

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  • D. Hoonhout and F.W. Saris, Threshold energy density for pulsed-laser annealing of ion-implanted silicon, J. Appl. Phys. 53, 4379-4388 (1982)

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  • D. Hoonhout and F.W. Saris, Dopant redistribution by pulsed-laser annealing of ion-implanted silicon, Radiat. Eff. 66, 43-59 (1982)

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  • L. Smit, T. de Jong, D. Hoonhout and F.W. Saris, Silicon molecular beam epitaxy on arsenic-implanted and laser-processed silicon, Appl. Phys. Lett. 40, 64-65 (1982)

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  • J. Kistemaker, About the FOM-institute for Atomic and Molecular Physics in Amsterdam (1960-1982), Bull. Classe Sci., 5e Série 68, 147-160 (1982)

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