The growth and atomic structure of the Si(111)-indium interface studied by surface X-ray diffraction

Surface X-ray diffraction has been used to monitor the growth of indium on silicon (111) as a function of temperature and to determine the atomic structure of the Si(111) 4 x 1-In reconstruction. The results indicate there are four indium atoms per 4 x 1 unit mesh with an average near neighbour separation which is reduced from that of the indium bulk.