The Application of Electron Backscatter Diffraction on Halide Perovskite Materials

Recently, the application of electron backscatter diffraction (EBSD) in halide perovskites has enabled the correlation of the micro‐structural arrangement of polycrystalline grains with other properties (optical, electrical, mechanical, and chemical) in a “pixel‐by‐pixel” approach. Most studies so far have used an ultra‐sensitive electron beam detector that has sensitivity thousands of times higher than a traditional scintillator screen and charge coupled device camera, enabling much lower beam currents. An alternative approach has been the use of low vacuum measurement conditions to avoid charge buildup that leads to damage. This review focuses on introducing the classical EBSD technique to the halide perovskite community, where it has been highly underutilized due to beaminduced damage in these relatively unstable materials. Recent research is used to dispel some common misconceptions about grain boundaries in halide perovskites and highlight what has been learned by comparing and correlating EBSD with other techniques. Additionally, the remaining limitations, development challenges, and future of the EBSD technique for halide perovskites are discussed. Successful utilization of the EBSD technique as a common characterization tool in the halide perovskite community will enable scientists and engineers to develop maps of cross correlated properties, helping to unlock the full potential of this complex material system.