Strain relaxation in Ge/Si(001) studied using X-ray diffraction

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Reference J.E. MacDonald, A.A. Williams, R. van Silfhout, J.F. van der Veen, M.S. Finney, A.D. Johnson and C. Norris: Strain relaxation in Ge/Si(001) studied using X-ray diffraction In: Kinetics of Ordering and Growth at Surfaces /ed. M.G. Lagally, Plenum Press, 1990. - pp. 473-481