Reduction of secondary defect formation in MeV B+ ion-implanted Si (100) Back to all publications Publication date 1 January 1989 Reference W.X. Lu, Y.H. Qian, R.H. Tian, Z.L. Wang, R. Schreutelkamp, J.R. Liefting and F.W. Saris, Reduction of secondary defect formation in MeV B+ ion-implanted Si (100), Appl. Phys. Lett. 55, 1838-1840 (1989) Request this article