Reduction of secondary defect formation in MeV As ion implanted Si(100) Back to all publications Publication date 1 January 1991 Reference R. Schreutelkamp, W.X. Lu, J.R. Liefting, V. Raineri, J.S. Custer and F.W. Saris, Reduction of secondary defect formation in MeV As ion implanted Si(100), Nucl. Instrum. Methods Phys. Res., Sect B 59/60, 614-618 (1991) Request this article