Raman study of de-relaxation and defects in amorphous silicon induced by MeV ion beams Back to all publications Publication date 1 January 1990 Reference S. Roorda, J.M. Poate, D.C. Jacobson, B.S. Dennis, S. Dierker and W.C. Sinke, Raman study of de-relaxation and defects in amorphous silicon induced by MeV ion beams, Appl. Phys. Lett. 56, 2097-2099 (1990) Download (pre)print
