| Reference |
J. Vrijmoeth, J.F. van der Veen, D.R. Heslinga and T.M. Klapwijk, Medium-energy ion-scattering study of a possible relation between the Schottky-barrier height and the defect density at NiSi2/Si(111) interfaces, Phys. Rev. B 42, 9598-9608 (1990) |
