Low effective back-surface recombination velocity by boron implantation on 0.3-W-r-type silicon solar cells Back to all publications Publication date 1 January 1988 Reference L.A. Verhoef, A. Zondervan, F.A. Lindholm, M.B. Spitzer and C.J. Keavney, Low effective back-surface recombination velocity by boron implantation on 0.3-W-r-type silicon solar cells, J. Appl. Phys. 63, 4683-4687 (1988) Request this article
