| Reference |
P.A. Stolk, A. Polman and W.C. Sinke: Epitaxial explosive crystallization of amorphous silicon layers buried in a silicon (100) and (111) matrix In: Ion Beam Processing of Advanced Electronic Materials : Symposium held April 25-27, 1989, San Diego, California, U.S.A. /ed. N.W. Cheung, A.D. Marwick and J.B. Roberto, Materials Research Society, 1989. - pp. 179-184 |
