Enhancing silicon solar cells with singlet fission: the case for Foerster resonant energy transfer using a quantum dot intermediate

One way for solar cell efficiencies to overcome the Shockley-Queisser limit is downconversion of high-energy photons using singlet fission (SF) in polyacenes like tetracene (Tc). SF enables generation of multiple excitons from the high-energy photons which can be harvested in combination with Si. In this work we investigate the use of lead sulfide quantum dots (PbS QDs) with a band gap close to Si as an interlayer that allows Foerster Resonant Energy Transfer (FRET) from Tc to Si, a process that would be spin-forbidden without the intermediate QD step. We investigate how the conventional FRET model, most commonly applied to the description of molecular interactions, can be modified to describe the geometry of QDs between Tc and Si and how the distance between QD and Si, and the QD bandgap affects the FRET efficiency. By extending the acceptor dipole in the FRET model to a 2D plane, and to the bulk, we see a relaxation of the distance dependence of transfer. Our results indicate that FRET efficiencies from PbS QDs to Si well above 50 % are be possible at very short, but possibly realistic distances of around 1 nm, even for quantum dots with relatively low photoluminescence quantum yield.