Electrically active, ion implanted boron at the solubility limit in silicon Back to all publications Publication date 1 January 1993 Reference J.R. Liefting, R. Schreutelkamp, J. Vanhellemont, W. Vandervorst, K. Maex, J.S. Custer and F.W. Saris, Electrically active, ion implanted boron at the solubility limit in silicon, Appl. Phys. Lett. 63, 1134-36 (1993) Request this article
