Reference |
J.R. Liefting, J.S. Custer, R. Schreutelkamp and F.W. Saris: Dislocation formation in Si implanted at elevated temperature In: Crucial Issues in Semiconductor Materials and Processing Technologies : Proceedings of the NATO Advanced Study Institute on Semiconductor Materials and Processing Technologies, Erice, Italy, 1-13 July 1991 /ed. S. Coffa, F. Priolo, E. Rimini and J.M. Poate, Kluwer Academic Publishers, 1992. - pp. 219-224 |