Damage distribution and annealing behaviour of high energy 115In+ implanted into Si(100) Back to all publications Publication date 1 January 1990 Reference B.-X. Zhang, Z.L. Wang, R. Schreutelkamp, F.W. Saris, A.-Y. Du and Q. Li, Damage distribution and annealing behaviour of high energy 115In+ implanted into Si(100), Nucl. Instrum. Methods Phys. Res., Sect B 48, 425-430 (1990) Request this article