More 3D Photovoltaics publications
R. Tanta, T. Kanne, F. Amaduzzi, Z. Liao, M. H Madsen, E. Alarcón-Lladó, P. Krogstrup, E. Johnson, A. Fontcuberta i Morral, T. Vosch, Morphology and composition of oxidized InAs nanowires studied by combined Raman spectroscopy and transmission electron microscopy, Nanotech. 27, 305704 (2016)
F. Matteini, G. Tutuncuoglu, D. Rueffer, E. Alarcon-Llado, A. Fontcuberta I Morral, Ga-assisted growth of GaAs nanowires on silicon, comparison of surface SiOx of different nature, J. Crys. Growth 404, 246 (2014)
E. Russo-Averchi, A. Dalmau-Mallorqui, I. Canales-Mundet, G. Tutuncuoglu, E. Alarcon-Llado, M. Heiss, D. Ruffer, S. Conesa-Boj, P. Caroff, A. Fontcuberta-i-Morral, Growth mechanisms and process window for InAs V-shaped nanoscale membranes on Si[001], Nanotechnology 24, 435603 (2013)
J.Seidel, S. Y. Yang, E Alarcon-Llado, J. W. Ager, and R. Ramesh, Nanoscale Probing of High Photovoltages at 109 degrees Domain Walls, Ferroelectrics 433, 123 (2012)
E. Alarcón-Lladó, S. Estradé, J. D. Prades, F. Hernandez-Ramírez, J. Arbiol, F. Peiró, J. Ibáñez, L. Artús and J. R. Morante, Substrate effects on the structural and photoresponse properties of CVD grown ZnO nanostructures: alumina vs. silica, CrystEngComm, 2011, 13, 656-662 (2011)
E. Alarcón-Lladó, J. Ibáñez, S. Estrade, D. Prades, J. R. Morante, R. Cuscó, and L. Artús, Ultraviolet Raman scattering in ZnO nanowires: quasimode mixing and temperature effects, J. Raman Spectr. 42, 153–15 (2011)
V. K. Lin, S. L. Teo, R. Marty, A. Arbouet, C. Girard, E. Alarcón-Lladó, M. Y. Han, S. Tripathy, and A. Mlayah, Dual wavelength sensing based on interacting gold nanodisk trimers, Nanotechnology 21 305501 (2010)
V. K. Lin, E. Alarcón-Lladó, H. H. Kim, S. Arulkumaran, G. I. Ng, A. Ramam, and S. Tripathy, Structural and electrical characterization of AlGaN/GaN interfaces for ultraviolet detectors, Electrochem. Solid-State Lett., 13, H301 (2010)
R. Cuscó, J. Ibáñez, E. Alarcón-Lladó, L. Artús, J. E. Maslar, W. S. Hurst, C. A. Wang, Raman scattering by LO-phonon-plasmon coupled modes in GaInAsSb: the role of Landau damping, Phys. Rev. B 81, 195212 (2010)
I. Garbayo, A. Tarancón, J. Santiso, F. Peiró, E. Alarcón-LLadó, A. Cavallaro, I. Gràcia, C. Cané, N. Sabaté, Electrical characterization of thermomechanically stable YSZ membranes for micro solid oxide fuel cells applications, Solid State Ionics 181, 322 (2010)
R. Cuscó, J. Ibáñez, E. Alarcón-Lladó, L. Artús, T. Yamaguchi and Y. Nanishi, Photoexcited carriers and surface recombination velocity in InN epilayers: A Raman scattering study, Phys. Rev. B 80, 155204 (2009)
E. Alarcón-Lladó, J. Ibáñez, R. Cuscó, L. Artús, S.V. Novikov, and C. T. Foxon, Raman scattering study of cubic GaN and GaMnN epilayers grown by plasma-assisted molecular beam epitaxy, Semic. Sci. Tech. 24, 115019 (2009)
R. Cuscó, E. Alarcón-Lladó, J. Ibáñez, T. Yamaguchi, Y. Nanishi, and L. Artús, A Raman scattering study of electron background density in InN: a hydrodynamical approach to the LO-phonon-plasmon coupled modes, J. Phys. Cond. Matter 21, 415801 (2009)
J. Ibáñez, E. Alarcón-Lladó, R. Cuscó, L. Artús, M. Henini, M. Hopkinson, Dilute (In,Ga)(As,N) thin films grown by molecular beam epitaxy on (100) and non-(100) GaAs substrates, Journal of Materials Science: Materials in Electronics 20, S116 (2009)
E. Alarcón-Lladó, R. Cuscó, L. Artús, J. Jiménez, B. Wang, M. Callahan, Raman scattering of quasimodes in ZnO, Journal of Physics: Condensed Matter 22 445211 (2008)
J. Ibáñez, R. Cuscó, E. Alarcón-Lladó, L. Artús, A. Patane, D. Fowler, L. Eaves, K. Uesugi, I. Suemune, Electron effective mass and mobility in heavily doped n-GaAsN probed by Raman scattering, Journal of Applied Physics 103 103528 (2008)
J. Ibáñez, S. Hernández, E. Alarcón-Lladó, R. Cuscó, L. Artús, S.V. Novikov, C.T. Foxon, E. Calleja, Far-infrared transmission in GaN, AlN and AlGaN thin films grown by molecular beam epitaxy, Journal of Applied Physics 104, 033544 (2008)
R. Cuscó, E. Alarcón-Lladó, J. Ibáñez, L. Artús, S. Gautier, A. Ougazzaden, Phonons in BxGa1-xN/GaN epilayers studied by means of UV Raman scattering, Physica Status Solidi b, 245, 731 (2008)
J. Ibáñez, E. Alarcón-Lladó, R. Cuscó, L. Artús, M. Hopkinson, Optical phonon behavior in strain-free dilute Ga(As,N) studied by Raman scattering, Journal of Applied Physics 102, 013502 (2007)
L. Artús, R. Cuscó, E. Alarcón-Lladó, J. Jiménez, I. Martil, G. González-Diaz, B. Wang, M. Callahan, Isotopic study of the nitrogen-related modes in N+-implanted ZnO, Applied Physics Letters 90 181911 (2007)
J. Ibáñez, D. Pastor, E. Alarcón-Lladó, R. Cuscó, L. Artús, S.V. Novikov, C.T. Foxon, Raman scattering study of undoped and As-doped GaN grown with different III/V ratios, Semiconductor Science and Technology, 22-1145 (2007)
