Properties of rare-earth doped c-Si

Rare earth (RE) ions, incorporated in a solid, can show sharp, atomic-like and temperature-independent optical transitions. If silicon could be effectively doped with optically active RE ions, it would be possible to achieve efficient light emission from this semiconductor, circumventing the limitations posed by its indirect bandgap. This would allow combining the excellent electronic properties of Si with the attractive optical properties of rare earth ions, opening perspectives for a new class of device applications.