• L.W. Wiggers and F.W. Saris: Channelling studies of electron-induced displacement in Si In: Defects and Radiation Effects in Semiconductors : Conference proceedings /ed. H. Albany, IoP, 1979. - pp. 237-240

    Read more

  • L.W. Wiggers and F.W. Saris, Displacement of impurities in Si by irradiation with energetic H+ or H- particles, Radiat. Eff. 41, 149-164 (1979)

    Read more

  • P. Massmann, H.J. Hopman and J.H. Los, Negative surface ionization of hydrogen and its application to plasma diagnostics, Nucl. Instrum. Methods 165, 531-535 (1979)

    Read more

  • M.S. de Vries, N.J.A. van Veen and A.E. de Vries: Study of two crossing excited state potential energy curves in ICl by means of photofragment spectroscopy In: VII International Symposium on Molecular Beams, May 28 - June 1, 1979, Riva del Garda (Trento) Italy, , 1979. - pp. 286-288

    Read more

  • J.G. Bannenberg, Accelerator systems for ion implantation research, Radiat. Eff. 44, 3-10 (1979)

    Read more

  • P.J.K. Langendam, Free-free radiative transitions of electron-atom systems, Leiden University, 1978-12-14

    Read more

  • L.W. Wiggers, Channeling studies of impurity-defect interactions in silicon, Utrecht University, 1978-11-22

    Read more

  • J.F. van der Veen, Ion-beam crystallography of clean and adsorbate covered metal surfaces, Utrecht University, 1978-11-06

    Read more

  • H. Overeijnder, Electron and ion induced sputtering of alkali halides, University of Amsterdam UvA, 1978-06-21

    Read more

  • J.F. van der Veen, J.-B. Sanders and F.W. Saris, Two-atom model for the calculation of surface blocking in medium and high energy ion scattering, Surf. Sci. 77, 337-350 (1978)

    Read more