| Reference |
R. Schreutelkamp, K.T.F. Janssen, F.W. Saris, J.F.M. Westendorp and R.E. Kaim: Influence of phosphorus dopant concentration on recrystallization of buried amorphous layers in Si(100) produced by channeled implants In: Processing and Characterization of Materials Using Ion Beams : Symposium held November 28-December 2, 1988, Boston Massachusetts, U.S.A. /ed. L.E. Rehn, J. Greene and F.A. Smidt, Materials Research Society, 1989. - pp. 557-562 |
