| Reference |
L.W. Wiggers and F.W. Saris: Effect of the Fermi level position in silicon on ion-induced displacement of impurities In: International Conference on Ion Beam Modification of Materials 4-8 September 1978, Budapest : Proceedings ; Vol. 1 /ed. J. Gyulai, T. Lohner and E. Pasztor, , 1979. - pp. 583-597 |
