Characterization of amorphous silicon

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Publication date	1 January 1994
Reference	R.A. Hakvoort, A. van Veen, H. Schut, M.J. van den Boogaard, A. Berntsen, S. Roorda, P.A. Stolk and A.H. Reader: Characterization of amorphous silicon In: Slow Positron Beam Techniques for Solids and Surfaces : Fifth International Workshop, Jackson Hole, WY, August 1992 /ed. E. Ottewitte and A.H. Weiss, American Institute of Physics, 1994. - pp. 48-52

S-parameter positron beam measurements have been done on several kinds of a-Si: Kr-sputtered a-Si, PECVD a-Si, MeV ion beam amorphized Si and a-Si grown in an MBE-system at a low deposition temperature. Kr sputtered a-Si becomes denser for higher Kr concentration. PECVD a-Si:H contains micro-cavities with a size depending on growth temperature. MeV ion beam amorphized Si contains 1.2 at.% small vacancies, which decreases upon annealing (relaxation) to 0.4 at.%. This effect can be mimicked by H-implantation and subsequent annealing, showing that at least some of the dangling bonds in a-Si are located at these vacancy-type defects. Finally positron measurements show that MBE-system grown a-Si contains large open-volume defects. The positron annihilation data are supplemented by data from some other techniques.

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