| Reference |
M.L. Swanson, L.M. Howe, F.W. Saris and A.F. Quenneville: A channeling study of defect-Boron complexes in Si In: Defects in Semiconductors : Proceedings of the Materials Research Society Annual Meeting, November 1980, Copley Plaza Hotel, Boston, Massachusetts, U.S.A. /ed. J. Narayan and T.Y. Tan, North-Holland, 1981. - pp. 71-78 |
