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R. Schreutelkamp, W.X. Lu, J.R. Liefting, V. Raineri, J.S. Custer and F.W. Saris, Reduction of secondary defect formation in MeV As ion implanted Si(100), Nucl. Instrum. Methods Phys. Res., Sect B 59/60, 614-618 (1991)
V.K. Nikulin, D. Dijkkamp, Y.S. Gordeev, A.V. Samoylov and F.J. de Heer, Electron capture into excited projectile states in 6-100 keV Ne4+-Ne collisions, J. Phys. B: At., Mol. Opt. Phys. 17, 721-725 (1984)
I. Yamada, D. Marton and F.W. Saris, Residual damage to an atomically cleaned low-temperature-annealed Si (100) surface, Appl. Phys. Lett. 37, 563-565 (1980)
R.M. Tromp, E.J. van Loenen, M. Iwami, R.G. Smeenk and F.W. Saris, Ion beam analysis of the reaction of Pd with Si(100) and Si(111) at room temperature, Surf. Sci. 124, 1-25 (1983)
J.F. van der Veen, F.J. Himpsel and D.E. Eastman, Chemisorption-induced 4¦-core-electron binding-energy shifts for surface atoms of W(111), W(100), and Ta(111), Phys. Rev. B 25, 7388-7397 (1982)
V. Raineri, R. Schreutelkamp, F.W. Saris, R.E. Kaim and K.T.F. Janssen, Secondary defect reduction by channeling implantation of B and P in <100> silicon, Nucl. Instrum. Methods Phys. Res., Sect B 59/60, 1056-1060 (1991)
L. Vriens, J.A. Simpson and S.R. Mielczarek, Tests of born approximations: Differential and total 23S,21P,and 21S cross sections for excitation of He by 100- to 400-eV electrons, Phys. Rev. 165, 7-15 (1968)
