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J.S. Custer, M.O. Thompson, D.J. Eaglesham, D.C. Jacobson, J.M. Poate, J.R. Liefting and F.W. Saris: Epitaxy and nucleation in Cu and Ag doped amorphous SiIn: Kinetics of Phase Transformations : Symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A. /ed. M.O. Thompson, M.J. Aziz and G.B. Stephenson, Materials Research Society, 1992. - pp. 69-74
M. Lohmeier, W.J. Huisman, G. ter Horst, P.M. Zagwijn, A. Nishiyama, C.L. Nicklin, T.S. Turner and E. Vlieg: Atomic structure of ultrathin erbium silicides on Si(111)In: Evolution of ThinFilm and Surface Structure and Morphology /ed. B.G. Demczyk, E. Garfunkel, B.M. Clemens, E.D. Williams and J.J. Cuomo, Materials Research Society, 1995. - pp. 281-286
S.P. Burgos, R. de Waele, A. Polman and H.A. Atwater, A single-layer wide-angle negative-index metamaterial at visible frequencies, Nature Mater. 9, (5), 407-412 (2010)
J.E. MacDonald, A.A. Williams, J.M.C. Thornton, R. van Silfhout, J.F. van der Veen, M.S. Finney and C. Norris: Grazing incidence X-ray diffraction studies of strain relaxation in monolayer-thick filmsIn: Microscopy of Semiconducting Materials 1991 : Proceedings of the Institute of Physics Conference, held at Oxford University, 25-28 march 1991 /ed. A.G. Cullis and N.J. Long, Institute of Physics, 1991. - pp. 645-650
T. de Jong, L. Smit and F.W. Saris: Laser processing in silicon molecular beam epitaxyIn: Laser and Electron-Beam Interactions with Solids : Proceedings of the Materials Research Society Annual Meeting, November 1981, Boston Park Plaza Hotel, Boston, Massachusetts, U.S.A. /ed. B.R. Appleton and G.K. Celler, North-Holland, 1982. - pp. 215-220
L.A. Klerk, P.Y.W. Dankers, E.R. Popa, A.W. Bosman, M.E. Sanders, K.A. Reedquist and R.M.A. Heeren, TOF-Secondary Ion Mass Spectrometry imaging of polymeric scaffolds with surrounding tissue after in vivo implantation, Anal. Chem. 82, (11), 4337-4343 (2010)
Y.N. Erokhin, R. Grotzschel, S.R. Oktyabrsky, S. Roorda, W.C. Sinke and A.F. Vjatkin: A novel process to form epitaxial Si structures with buried silicideIn: Phase Formation and Modification by Beam-Solid Interactions : Symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A. /ed. G.S. Was, L.E. Rehn and D.M. Follstaedt, Materials Research Society, 1992. - pp. 313-318
E. Vlieg and H.A. van der Vegt: X-ray scattering from interfacesIn: Interface Dynamics and Growth : Symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A. /ed. K.S. Liang, M.P. Anderson, R.F. Bruinsma and G. Scoles, Materials Research Society, 1992. - pp. 359-365
Abstract Halide perovskite semiconductors can merge the highly efficient operational principles of conventional inorganic semiconductors with the low temperature solution processability of emerging organic and hybrid materials, offering a promising route towards cheaply generating electricity …
L. de Wit, S. Roorda, W.C. Sinke, F.W. Saris, A. Berntsen and W.F. van der Weg: Structural relaxation of amorphous silicon induced by high temperature annealingIn: Kinetics of Phase Transformations : Symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A. /ed. M.O. Thompson, M.J. Aziz and G.B. Stephenson, Materials Research Society, 1992. - pp. 3-8