Suss MABA6 Mask aligner with SCIL option

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NUV optical lithography system. Patern resolution of sub micron in contact mode.

Specifications

• Suss MABA6 UV Mask aligner with SCIL
• exposure lamp Hg 1000W
• normal exposure dose 25 mW/ cm²
• optics wavelength range UV300 280-350 nm (future UV 250 240-260 nm)
• exposure modes; proximity (1-300 mu gap), soft, hard and vacuum contact
• resolution depending on contact mode and mask <1 µm (future 0.5 µm)
• split field topside microscope with 5x, 10x and 20x objective
• bottom side microscope
• bottom and top alignment system accuracy 1 micron
• automatic wedge compensation
• mask holders; opening for 3”, 4”, 6” wafers and 30mm square
• sample chucks; 1”, 3” 4” and 6” wafers
• alignment stage; x +/- 10 mm Y +/- 5 mm theta 5°

SCIL (Substrate Conformal Imprint Lithography)

This technique combines the advantages of a soft stamp with a rigid glass carrier for low pattern deformation and best resolution for large area patterning.

• resolution down to sub 50nm on a 6” area
• high aspect ratio structures

More
Wikipedia – Photolithography
Wikipedia – Nanoimprint lithography
SUSS MicroTec  SCIL – Imprint Lithography