Sitesa addax RM6 Rapid Thermal Anneal
Rapid Thermal Anneal (RTA) can be used for; formation of oxide or nitride films, change thin film properties, repair damage from ion implantation or active dopants. The system can heat 4” silicon wafers or small pieces within a timescale of several seconds up to high temperatures between 600 – 1200 ºC. This can be done in an atmospheric gas pressure of pure argon, nitrogen, oxygen or a combination
Specifications
- Measured quantity: Temperature, gas flow
- System; Sitesa addax RM6
- Rapid thermal processor
- Quartz lamp IR based heating
- Rapid heating 250 ºC/s
- Minimum temperature 600 ºC for unlimited time up to max 1200 ºC for max 2 hours
- Accuracy and reproducibility ± 2 ºC
- Low >800 ºC and high 800-1200 ºC temperature pyrometer
- Gasses; Ar, N2 or O2 possibility to mix these gases
- Parameter recipes for temperature and gas cycle