Silicon waveguide



Sitesa addax RM6 Rapid Thermal Anneal
Formation of oxide or nitride films, change thin film properties, repair damage from ion implantation, active dopants

cleanroom rta 3 amsterdam nanocenter


  • Measured quantity: Temperature, gas flow
  • Sitesa addax RM6
  • Rapid thermal processor
  • Heats 4” silicon wafers to high temperatures on a timescale of several seconds. This can be done within an atmospheric gas pressure of pure argon, nitrogen, oxygen or a combination
  • Quartz lamp based heating
  • Rapid heating 250 ºC/s
  • Minimum temperature 600 ºC up to max 1200 ºC for max 2 hours
  • Accuracy and reproducibility ± 2 ºC
  • Low >800 ºC and high 800-1200 ºC temperature pyrometer
  • Gasses; Ar, N2 or O2 It is possible to mix these gases
  • Parameter recipes for temperature and gas cycle