Oxford PlasmaPro100 ICPECVD
Inductively Coupled Plasma Enhanced Chemical Vapor Deposition (ICPCVD) system for production of uniform thin films SiO2, Si3N4 and SiON, aSi, and SiC at substrate temperatures between 5°C and 400°C.
Specifications
- Oxford PlasmaPro 100 ICPECVD
- gas control system for pressure controle and gas mixtures by flow gasses; SiH4, Ar, CH4, N2O, O2, N2, H2, SF6
- 300W RF generator
- 3 kW ICP RF generator
- Electrode temperature range 5°C to +400°C
- 4” wafer clamping with helium assisted heat transfer
- vacuum system; 1600 l/s turbo pump with a dry prevacuum pump
- scrubber for toxic gases
- combined loadlock system via cleanroom interface for the RIE/ICP etch Cobra and the ICPCVD system