Silicon waveguide

Oxford PlasmaPro100 ICPECVD


Inductively Coupled Plasma Enhanced Chemical Vapor Deposition (ICPCVD) system for production of uniform thin films SiO2, Si3N4 and SiON, aSi, and SiC at substrate temperatures between 5°C and 400°C.


  • Oxford PlasmaPro 100 ICPECVD
  • gas control system for pressure controle and gas mixtures by flow gasses; SiH4, Ar, CH4, N2O, O2, N2, H2, SF6
  • 300W RF generator
  • 3 kW ICP RF generator
  • Electrode temperature range 5°C to +400°C
  • 4” wafer clamping with helium assisted heat transfer
  • vacuum system; 1600 l/s turbo pump with a dry prevacuum pump
  • scrubber for toxic gases
  • combined loadlock system via cleanroom interface for the RIE/ICP etch Cobra and the ICPCVD system

Wikipedia -Plasma-enhanced chemical vapor deposition