Silicon waveguide

Oxford PlasmaPro100 Cobra


RF discharge for etching of silicon based thin films. Dedicated system for plasma etching of Si, SiO2, Si3N4 with low sidewall roughness. It‘s not allowed to etch metals.


  • Oxford PlasmaPro100 Cobra
  • gas inlet system for pressure control and gas mixtures
  • gasses; CHF3, SF6, O2, Ar, C4F8, CF4, HBr and Cl2
  • 300W RIE RF generator
  • 3 kW ICP RF generator
  • laser interferometer end point detector
  • chiller temperature range 0°C to +80°C
  • LN cryo-cooled electrically-heated temperature range -100°C to +400°C
  • 4” wafer clamping with helium assisted heat transfer
  • vacuum system; 1400 l/s turbo pump with a dry prevacuum pump
  • scrubber for toxic gases
  • combined load lock system via cleanroom interface for the RIE/ICP etch Cobra and the ICPCVD system

Wikipedia – Reactive-ion etching