Oxford PlasmaPro100 Cobra

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RF discharge for etching of silicon based thin films. Dedicated system for plasma etching of Si, SiO2, Si3N4 with low sidewall roughness. It‘s not allowed to etch metals.

Specifications

• Oxford PlasmaPro100 Cobra
• gas inlet system for pressure control and gas mixtures
• gasses; CHF3, SF6, O2, Ar, C4F8, CF4, HBr and Cl2
• 300W RIE RF generator
• 3 kW ICP RF generator
• laser interferometer end point detector
• chiller temperature range 0°C to +80°C
• LN cryo-cooled electrically-heated temperature range -100°C to +400°C
• 
  4” wafer clamping with helium assisted heat transfer
• vacuum system; 1400 l/s turbo pump with a dry prevacuum pump
• scrubber for toxic gases
• combined load lock system via cleanroom interface for the RIE/ICP etch Cobra and the ICPCVD system

More
Wikipedia – Reactive-ion etching