Silicon waveguide

Oxford PlasmaPro100 Cobra

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RF discharge for etching of silicon based thin films. Dedicated system for plasma etching of Si, SiO2, Si3N4 with low sidewall roughness. It‘s not allowed to etch metals.

Specifications

cleanroom plasmaro 100 HJB4034 amsterdam nanocenter

  • gas control system for pressure controle and gas mixtures by flow gasses; CHF3, SF6, O2, Ar, C4F8, CF4, HBr and Cl2
  • 300W RIE RF generator
  • 3 kW ICP RF generator
  • laser interferometer end point detector
  • chiller temperature range 0°C to +80°C
  • LN cryo-cooled electrically-heated temperature range -100°C to +400°C
  • 4” wafer clamping with helium assisted heat transfer
    cleanroom plasmapro 100 HJB4032 amsterdam nanocenter
  • vacuum system; 1400 l/s turbo pump with a dry prevacuum pump
  • loadlock system with cleanroom interface
  • scrubber for toxic gases

cleanroom plasmapro 100 HJB4051 amsterdam nanocenter

cleanroom plasmapro 100 HJB4052 amsterdam nanocenter