Oxford Plasmalab 80+ Ion beam etching
RF discharge for etching thin films. It‘s allowed, after communication with the NanoLab staff, to etch thin layers of some metals.
Specifications
- Oxford Plasmalab 80+
- Turbo pump vacuum system
- Process pressure 5-150 mbar
- Gas inlet system for process pressure control and gas mixtures
- Gasses; CHF3, SF6, O2, Ar
- Max 300 W for Reactive Ion Etching (RIE)
- Max 300 W for Inductive Coupled Plasma (ICP)
- ICP gives independent ion energy control
- Low damage
- Highly selective processing
- Uniform plasma etch
- Laser Interferometer endpoint detection
- Max sample area 90 mm diameter