Silicon waveguide

Oxford Plasmalab 80+ Ion beam etching


RF discharge for etching thin films. It‘s allowed, after communication with the NanoLab staff, to etch thin layers of some metals.


  • Oxford Plasmalab 80+
  • Turbo pump vacuum system
  • Process pressure 5-150 mbar
  • Gas inlet system for process pressure control and gas mixtures
  • Gasses; CHF3, SF6, O2, Ar
  • Max 300 W for Reactive Ion Etching (RIE)
  • Max 300 W for Inductive Coupled Plasma (ICP)
  • ICP gives independent ion energy control
  • Low damage
  • Highly selective processing
  • Uniform plasma etch
  • Laser Interferometer endpoint detection
  • Max sample area 90 mm diameter

Wikipedia – Reactive-ion etching