Silicon waveguide

Oxford Plasmalab 80+ Ion beam etching

Back

Specifications

cleanroom ion etching system amsterdam nanocenter

  • Turbo pump vacuum system
  • Process pressure 5-150 mbar
  • Gas control system for pressure controle and gas mixtures
  • Gasses; CHF3, SF6, O2, Ar
  • Max 300 W for Reactive Ion Etching (RIE)
  • Max 300 W for Inductive Coupled Plasma (ICP)
  • Independent control of ion energy
  • Low damage
  • Highly selective processing
  • Uniform plasma etch
  • Laser Interferometer endpoint detection
  • Max sample area 90 mm diameter

More: Wikipedia – Reactive-ion etching