Nanoscribe 3D laser lithography
By tightly focusing the light of an ultra-short pulsed laser, the intensity within the very focus is sufficiently high to expose the photoresist by two-photon absorption. This process causes a chemical and/or physical change of the photoresist within a small pixel (“voxel”). This voxel typically is of ellipsoidal shape and is the basic building block for the fabrication of 3D structures. The resolution is strongly dependent on the photoresist.
- Voxel size; x-y ~200 nm z~1000 nm
- Positioning accuracy <1 nm
- Repeat accuracy 5 nm
- Writing volume 300 x 300 x 100 mu
- Laser center wavelength 780 nm
- Applicable photoresist; SU-8, IP-L, IP-G, AZ 9260