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  • November 7, 2018

    Silicon Nanocrystals with enhanced photophysics

    Abstract Silicon is the cornerstone of microelectronics, photovoltaics and optoelectronics, however, due to its indirect band-gap, there is no efficient silicon based LED and laser. Importantly, Si laser is the last missing key device for …
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  • L.A. Klerk, Imaging mass spectrometry of polymeric materials, Utrecht University, 2009-12-09

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  • L. Helmbrecht, Ion Exchange, Self-Assembly, and Light Emission. A Dance of Ions and Light, University of Amsterdam UvA, 2020-11-20

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  • Y. Zhang, Long-range surface polaritons in thin layers of absorbing materials, Eindhoven University of Technology, 2011-09-12

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  • J.-B. Sanders, On penetration depths and collision cascades in solid materials, Leiden University, 1968-02-14

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  • P. Mazur and J.-B. Sanders, On the derivation of the range equation for energetic particles in amorphous materials, Physica 44, 444-448 (1969)

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  • H.L.C. Meuzelaar, P.G. Kistemaker and M.A. Posthumus, Recent Advances in Pyrolysis Mass Spectrometry of Complex Biological Materials, Biomed. Mass Spectrom. 1, 312-319 (1974)

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  • A. Polman, E. Snoeks, G.N. van den Hoven, J.S. Custer, B.L.M. Hendriksen, M.B.J. Diemeer, J.W.M. van Uffelen, Y.S. Oei, M.K. Smit, M. Fleuster and C. Buchal: Erbium ion implantation doping of opto-electronic materials operating at 1,5 In: 19th European Conference on Optical Communication, September 12-16, 1993, Centre de Congrès det d'Expositions, Montreaux, Switzerland, Proceedings vol. 2 (Regular papers), [s.n.], 1993. - pp. 61-64

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  • F.W. Saris, Materials modification by MeV ion implantation, Vacuum 39, 173-176 (1989)

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